Method of forming a crystalline phase material
First Claim
1. A semiconductor construction comprising:
- a crystalline material layer over a substrate; and
compressive stress inducing atoms within the crystalline material layer, the compressive stress inducing atoms being present within the crystalline material layer at a concentration of from about 1016 atoms/cm3 to about 1022 atoms/cm3.
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Abstract
A method of forming a crystalline phase material includes, a) providing a stress inducing material within or operatively adjacent a crystalline material of a first crystalline phase; and b) annealing the crystalline material of the first crystalline phase under conditions effective to transform it to a second crystalline phase. The stress inducing material preferably induces compressive stress within the first crystalline phase during the anneal to the second crystalline phase to lower the required activation energy to produce a more dense second crystalline phase. Example compressive stress inducing layers include SiO2 and Si3N4, while example stress inducing materials for providing into layers are Ge, W and Co. Where the compressive stress inducing material is provided on the same side of a wafer over which the crystalline phase material is provided, it is provided to have a thermal coefficient of expansion which is less than the first phase crystalline material. Where the compressive stress inducing material is provided on the opposite side of a wafer over which the crystalline phase material is provided, it is provided to have a thermal coefficient of expansion which is greater than the first phase crystalline material. Example and preferred crystalline phase materials having two phases are refractory metal silicides, such as TiSix.
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Citations
10 Claims
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1. A semiconductor construction comprising:
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a crystalline material layer over a substrate; and
compressive stress inducing atoms within the crystalline material layer, the compressive stress inducing atoms being present within the crystalline material layer at a concentration of from about 1016 atoms/cm3 to about 1022 atoms/cm3. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification