Light emitting diode chip and light emitting diode using the same

• US 20060243993A1
• Filed: 04/28/2006
• Published: 11/02/2006
• Est. Priority Date: 04/29/2005
• Status: Abandoned Application

• Current Assignee: Hon Hai Precision Industry Co., Ltd.
• Original Assignee: Hon Hai Precision Industry Co., Ltd.
• Inventors: Yu, Tai-Cherng
• Application Number:
  US11/414,074
• Publication Number:
  US 20060243993A1
• Time in Patent Office: Days
• US Class Current: 257/95
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/10155 being other than a cuboid
• CPC Class Codes: H01L 2924/1815 Shape
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/54 having a particular shape

Abstract

A light emitting diode chip includes a first electrode (13), a reflective layer (11) formed on the first electrode, a light emitting layer (12) formed on the reflective layer and a second electrode (14) arranged on the light emitting layer. The light emitting layer tapers in a direction from the second electrode to the first electrode. Therefore a cross section of the light emitting diode chip is trapezoidal in shape. A light emitting diode includes a base (20), a light emitting diode chip, a first terminal (30), a second terminal (40), a light-permeable cover (50). The present light emitting diode has high light emitting efficiency and low heat emission.

Claims

1. A light emitting diode chip comprising:

a first electrode;

a reflective layer formed on the first electrode;

a light emitting layer formed on the reflective layer; and

a second electrode arranged on the light emitting layer, wherein the light emitting layer tapers in a direction from the second electrode to the first electrode.

2. The light emitting diode chip as claimed in claim 1, wherein a cross section of the light emitting diode chip is a trapezoidal in shape.

3. The light emitting diode chip as claimed in claim 1, wherein the light emitting layer is comprised of a material selected from the group consisting of indium gallium aluminum phosphide (InGaAlP) and gallium phosphide (GaP).

4. The light emitting diode chip as claimed in claim 1, wherein the reflective layer is comprised of n-type gallium arsenide (GaAs).

5. The light emitting diode chip as claimed in claim 1, wherein the light emitting layer comprises a plurality of quantum dots for emitting light.

6. A light emitting diode comprising:

a base;

a light emitting diode chip arranged on the base, the light emitting diode chip comprising a first electrode, a reflective layer formed on the first electrode, a light emitting layer formed on the reflective layer; and

a second electrode arranged on the light emitting layer;

wherein thickness of the light emitting layer tapers in a direction from the second electrode to the first electrode;

a first terminal electrically connected with the first electrode;

a second terminal electrically connected to the second electrode; and

a light-permeable cover enclosing the light emitting diode chip therein.

7. The light emitting diode as claimed in claim 6, wherein a cross section of the light emitting diode chip is a trapezoidal in shape.

8. The light emitting diode as claimed in claim 6, wherein the light emitting layer is comprised of a material selected from the group consisting of InGaAlP and GaP.

9. The light emitting diode as claimed in claim 6, wherein the reflective layer is comprised of n-type GaAs.

10. The light emitting diode as claimed in claim 6, wherein the cover comprises a concave lens portion spatially corresponding to the light emitting diode chip.