SEMICONDUCTOR LIGHT EMITTING DEVICE

• US 20060243996A1
• Filed: 04/27/2006
• Published: 11/02/2006
• Est. Priority Date: 05/02/2005
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Nada, Naoji, Yoshida, Tetsuyuki, Ueda, Mitsunori
• Granted Patent: US 7,420,220 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/58 Optical field-shaping elements

Abstract

A semiconductor light-emitting device having a semiconductor light-emitting chip; a high refractive index lens covering around the semiconductor light-emitting chip; and a resin having fine particles mixed therein that fills a space between the semiconductor light-emitting chip and the lens is provided. In the semiconductor light emitting device, the resin having fine particles mixed therein is composed of an optically transparent resin into which a large number of high refractive fine particles having a mean diameter of 100 nm or less and composed of a dielectric material are mixed uniformly to have a distance 200 nm or less between respective particles.

Claims

1. A semiconductor light-emitting device, comprising:

a semiconductor light-emitting chip;

a high refractive index lens covering around the semiconductor light-emitting chip; and

a resin having fine particles mixed therein that fills a space between the semiconductor light-emitting chip and the lens, wherein;

the resin having fine particles mixed therein is composed of an optically transparent resin into which a large number of high refractive fine particles having a mean diameter of 100 nm or less and composed of a dielectric material are mixed uniformly to have a distance 200 nm or less between respective particles.

2. The semiconductor light-emitting device as claimed in claim 1, wherein:

the optically transparent resin is any one of a UV curable resin and a two-component curable resin.

3. The semiconductor light-emitting device as claimed in claim 1, wherein:

the optically transparent resin is a semisolid resin.

4. The semiconductor light-emitting device as claimed in claim 1, wherein:

the fine particles mixed into the optically transparent resin are mainly composed of a material selected from oxides including titanium oxide, niobium oxide, tantalum oxide, zirconium oxide, cerium oxide and a mixture thereof.

5. The semiconductor light-emitting device as claimed in claim 1, wherein:

the fine particles mixed into the optically transparent resin are mainly composed of a material selected from nitrides including aluminum nitride, gallium nitride, silicon nitride and a mixture thereof.