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Method of fabricating vertical structure LEDs

  • US 20060244001A1
  • Filed: 01/07/2005
  • Published: 11/02/2006
  • Est. Priority Date: 04/09/2002
  • Status: Active Grant
First Claim
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1. A light-emitting device, comprising:

  • a metal layer;

    a GaN contact layer adjacent the metal layer;

    a GaN buffer layer;

    a light-emitting layer disposed between the GaN contact layer and the GaN buffer layer; and

    an ohmic contact on the GaN buffer layer.

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