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Trench gate type semiconductor device

  • US 20060244053A1
  • Filed: 04/06/2006
  • Published: 11/02/2006
  • Est. Priority Date: 04/28/2005
  • Status: Active Grant
First Claim
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1. A trench gate type semiconductor device comprising:

  • a first semiconductor layer having a first conductive type or a second conductive type;

    a second semiconductor layer having the second conductive type and disposed on a surface of the first semiconductor layer;

    a third semiconductor layer having the first conductive type and disposed on a surface of the second semiconductor layer;

    a fourth semiconductor layer having the second conductive type and disposed in a part of a surface portion of the third semiconductor layer;

    a trench penetrating from the surface of the third semiconductor layer through the fourth semiconductor layer and the third semiconductor layer and reaching the second semiconductor layer;

    a gate insulation film disposed on an inner wall of the trench;

    a gate electrode disposed on the gate insulation film in the trench;

    a first electrode electrically connected to the third semiconductor layer and the fourth semiconductor layer; and

    a second electrode electrically connected to the first semiconductor layer, wherein the trench includes a bottom having a curved surface, and the curved surface of the bottom of the trench has a curvature radius equal to or smaller than 0.5 μ

    m.

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