Trench gate type semiconductor device
First Claim
1. A trench gate type semiconductor device comprising:
- a first semiconductor layer having a first conductive type or a second conductive type;
a second semiconductor layer having the second conductive type and disposed on a surface of the first semiconductor layer;
a third semiconductor layer having the first conductive type and disposed on a surface of the second semiconductor layer;
a fourth semiconductor layer having the second conductive type and disposed in a part of a surface portion of the third semiconductor layer;
a trench penetrating from the surface of the third semiconductor layer through the fourth semiconductor layer and the third semiconductor layer and reaching the second semiconductor layer;
a gate insulation film disposed on an inner wall of the trench;
a gate electrode disposed on the gate insulation film in the trench;
a first electrode electrically connected to the third semiconductor layer and the fourth semiconductor layer; and
a second electrode electrically connected to the first semiconductor layer, wherein the trench includes a bottom having a curved surface, and the curved surface of the bottom of the trench has a curvature radius equal to or smaller than 0.5 μ
m.
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Accused Products
Abstract
A semiconductor device includes: a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; a third semiconductor layer on the second semiconductor layer; a fourth semiconductor layer in a part of the third semiconductor layer; a trench penetrating the fourth semiconductor layer and the third semiconductor layer and reaching the second semiconductor layer; a gate insulation film on an inner wall of the trench; a gate electrode on the gate insulation film in the trench; a first electrode; and a second electrode. The trench includes a bottom with a curved surface having a curvature radius equal to or smaller than 0.5 μm.
13 Citations
15 Claims
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1. A trench gate type semiconductor device comprising:
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a first semiconductor layer having a first conductive type or a second conductive type;
a second semiconductor layer having the second conductive type and disposed on a surface of the first semiconductor layer;
a third semiconductor layer having the first conductive type and disposed on a surface of the second semiconductor layer;
a fourth semiconductor layer having the second conductive type and disposed in a part of a surface portion of the third semiconductor layer;
a trench penetrating from the surface of the third semiconductor layer through the fourth semiconductor layer and the third semiconductor layer and reaching the second semiconductor layer;
a gate insulation film disposed on an inner wall of the trench;
a gate electrode disposed on the gate insulation film in the trench;
a first electrode electrically connected to the third semiconductor layer and the fourth semiconductor layer; and
a second electrode electrically connected to the first semiconductor layer, wherein the trench includes a bottom having a curved surface, and the curved surface of the bottom of the trench has a curvature radius equal to or smaller than 0.5 μ
m. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A trench gate type semiconductor device comprising:
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a first semiconductor layer having a first conductive type or a second conductive type;
a second semiconductor layer having the second conductive type and disposed on a surface of the first semiconductor layer;
a third semiconductor layer having the first conductive type and disposed on a surface of the second semiconductor layer;
a fourth semiconductor layer having the second conductive type and disposed in a part of a surface portion of the third semiconductor layer;
a trench penetrating from the surface of the third semiconductor layer through the fourth semiconductor layer and the third semiconductor layer and reaching the second semiconductor layer;
a gate insulation film disposed on an inner wall of the trench;
a gate electrode disposed on the gate insulation film in the trench;
a first electrode electrically connected to the third semiconductor layer and the fourth semiconductor layer; and
a second electrode electrically connected to the first semiconductor layer, wherein the gate insulation film includes a bottom part and a side part, the bottom part of the gate insulation film is disposed on a bottom of the trench, the side part of the gate insulation film is disposed on a sidewall of the trench, and the bottom part of the gate insulation film has a thickness, which is thicker than a thickness of the side part of the gate insulation film. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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Specification