Force sensor array having magnetostrictive magnetoresistive sensors and method for determining a force

• US 20060246271A1
• Filed: 03/07/2006
• Published: 11/02/2006
• Est. Priority Date: 03/07/2005
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Quandt, Eckard, Ruehrig, Manfred, Zimmer, Juergen, Winkler, Bernhard, Schmitt, Stephan, Wecker, Joachim
• Granted Patent: US 7,535,217 B2
• Time in Patent Office: Days
• US Class Current: 428/212
• CPC Class Codes: G01L 1/125 by using magnetostrictive means magnetostrictive sensors H10N35/101
• CPC Class Codes: G01L 9/16 by making use of variations in the magnetic properties of material resulting from the application of stress
• CPC Class Codes: Y10T 428/1121 Multilayer
• CPC Class Codes: Y10T 428/24942 including components having same physical characteristic in differing degree

Abstract

The invention relates to a force sensor having a layer sequence for determining a force acting on the layer sequence along a predefined force axis. The layer sequence includes, arranged successively in a vertical direction, a first magnetic layer with a first magnetization direction, a separating layer and a second magnetic layer with a second magnetization direction. Here, the first magnetization direction is secured with respect to the layer sequence. The second magnetic layer has a magnetostriction constant that is different from zero and a uniaxial magnetic anisotropy with an anisotropy axis. The uniaxial magnetic anisotropy is generated using shape anisotropy. The second magnetization direction encloses an angle of more than 0° and less than 90° with the force axis in the quiescent state, and the anisotropy axis encloses an angle of more than 0° and less than 90° with the force axis.

Claims

1. A force sensor having a layer sequence for determining a force acting on the layer sequence along a predefined force axis, the layer sequence comprising:

a first magnetic layer with a first magnetization direction;

a separating layer; and

a second magnetic layer with a second magnetization direction, the first magnetic layer, separating layer, and second magnetic layer arranged successively in a vertical direction;

wherein the first magnetization direction is fixed with respect to the layer sequence;

wherein the second magnetic layer has a magnetostriction constant that is different from zero;

wherein the second magnetic layer has a uniaxial magnetic anisotropy with an anisotropy axis;

wherein the uniaxial magnetic anisotropy is generated using shape anisotropy;

wherein the second magnetization direction encloses an angle of more than 0° and

less than 90°

with the force axis in the quiescent state; and

wherein the anisotropy axis encloses an angle of more than 0° and

less than 90°

with the force axis.

2. The force sensor of claim 1, wherein the anisotropy axis encloses an angle between 60°

and less than 90°

with the force axis.

3. The force sensor of claim 1, wherein the magnetization direction of the second magnetic layer encloses an angle of greater than 60°

and less than 90°

with the force axis in the quiescent state.

4. The force sensor of claim 1, wherein the magnetization direction of the second magnetic layer encloses an angle greater than 0°

and less than 30°

with the force axis in the quiescent state.

5. The force sensor of claim 1, wherein the second magnetic layer has a negative magnetostriction constant.

6. The force sensor of claim 1, wherein the second magnetic layer is ferromagnetically coupled to the first magnetic layer.

7. The force sensor of claim 1, wherein the second magnetic layer is antiferromagnetically coupled to the first magnetic layer.

8. The force sensor of claim 1, wherein the first magnetic layer is embodied as an artificial antiferromagnet further comprising two magnetic layers that are antiferromagnetically coupled to one another and that have a nonmagnetic coupling layer between them.

9. The force sensor of claim 7, wherein the fixing of the first magnetic layer with respect to the layer sequence is brought about by antiferromagnetic coupling of the first magnetic layer to a further magnetic layer.

10. The force sensor of claim 1, wherein the layer sequence has a meandering structure.

11. A force sensor array comprising:

a first layer sequence of a first force sensor comprising a first magnetic layer with a first magnetization direction, a separating layer, and a second magnetic layer with a second magnetization direction, wherein the first magnetization direction is fixed with respect to the layer sequence, the second magnetic layer has a magnetostriction constant that is different from zero, the second magnetic layer has a uniaxial magnetic anisotropy with an anisotropy axis, the uniaxial magnetic anisotropy is generated using shape anisotropy, the second magnetization direction encloses an angle of more than 0° and

less than 90°

with the force axis in the quiescent state, and wherein the anisotropy axis enclosing an angle of more than 0° and

less than 90°

with the force axis;

a second layer sequence of a second force sensor;

wherein the first and second force sensors are arranged on a common carrier in such a way that when the carrier is deformed mechanically the first layer sequence has a higher electrical resistance than in the quiescent state, and the second layer sequence has a lower electrical resistance than in the quiescent state.

12. The force sensor array of claim 11, wherein the second layer sequence of the second force sensor further comprises a first magnetic layer with a first magnetization direction, a separating layer, and a second magnetic layer with a second magnetization direction, wherein the first magnetization direction is fixed with respect to the layer sequence, the second magnetic layer has a magnetostriction constant that is different from zero, the second magnetic layer has a uniaxial magnetic anisotropy with an anisotropy axis, the uniaxial magnetic anisotropy is generated using shape anisotropy, the second magnetization direction encloses an angle of more than 0°

and less than 90°

with the force axis in the quiescent state, and wherein the anisotropy axis enclosing an angle of more than 0° and

less than 90°

with the force axis.

13. The force sensor array of claim 12, wherein the magnetization directions of the first magnetic layers of the layer sequences of the first and second force sensor are identical.

14. The force sensor array of claim 12, wherein the anisotropy axis of the first layer sequence and the anisotropy axis of the second layer sequence are arranged essentially perpendicularly with respect to one another.

15. The force sensor array of claim 12, wherein the first layer sequence and the second layer sequence are connected electrically in series.

16. The force sensor array of claim 12 further comprising a third force sensor, and a fourth force sensor, that are arranged on a common carrier in such a way that when the carrier is deformed mechanically the layer sequence of the third force sensor has a higher electrical resistance than in the quiescent state, and the layer sequence of the fourth force sensor has a lower electrical resistance than in the quiescent state.

17. The force sensor array of claim 16, wherein an anisotropy axes of the third layer sequence and an anisotropy axes of the fourth layer sequence are arranged essentially perpendicularly with respect to one another.

18. The force sensor array of claim 17, wherein the anisotropy axes of the layer sequence of the first force sensor and the layer sequence of the third force sensor are arranged parallel to one another.

19. The force sensor array of claim 18, wherein the magnetization directions of the first magnetic layers of the layer sequences of the first, second, third and fourth force sensor are identical.

20. The force sensor array of claim 17, wherein the layer sequences of the first, second, third and fourth force sensor are embodied in an elongate fashion and are arranged along the sides of a rectangle or a square or along the circumference of an oval or a circle.

21. The force sensor array of claim 17, wherein the layer sequences of the first, second, third and fourth force sensor are in thermal contact with one another.

22. The force sensor array of claim 17, wherein the common carrier is embodied as a pressure sensor diaphragm.

23. The force sensor array of claim 17, wherein the layer sequences of the first, second, third and fourth force sensor are connected to form a Wheatstone bridge, the layer sequence of the first force sensor is connected to a first connecting point and to a second connecting point, the layer sequence of the second force sensor is connected to the first connecting point and to a third connecting point, the layer sequence of the third force sensor is connected to the third connecting point and to a fourth connecting point, and wherein the layer sequence of the fourth force sensor is connected to the asecond connecting point (nd to the fourth connecting point.

24. A method for determining a mechanical force acting on a carrier of a force sensor array comprising:

providing a force sensor array, the force sensor array comprising;

a first layer sequence of a first force sensor comprising a first magnetic layer with a first magnetization direction, a separating layer, and a second magnetic layer with a second magnetization direction, wherein the first magnetization direction is fixed with respect to the layer sequence, the second magnetic layer has a magnetostriction constant that is different from zero, the second magnetic layer has a uniaxial magnetic anisotropy with an anisotropy axis, the uniaxial magnetic anisotropy is generated using shape anisotropy, the second magnetization direction encloses an angle of more than 0° and

less than 90°

with the force axis in the quiescent state, and wherein the anisotropy axis enclosing an angle of more than 0° and

less than 90°

with the force axis;

a second layer sequence of a second force sensor; and

wherein the first and second force sensors are arranged on a common carrier in such a way that when the carrier is deformed mechanically the first layer sequence has a higher electrical resistance than in the quiescent state, and the second layer sequence has a lower electrical resistance than in the quiescent state;

deforming the common carrier by means of a mechanical force acting on it;

providing a supply voltage connected between a first connecting point and a fourth connecting point;

determining an output voltage present between the second connecting point and a third connecting point;

providing a characteristic curve which represents the relationship between the output voltage and the force acting on the common carrier; and

determining the force acting on the common carrier by using the output voltage which has been determined from the characteristic curve.