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SEMICONDUCTOR POWER DEVICE WITH PASSIVATION LAYERS

  • US 20060246642A1
  • Filed: 04/27/2006
  • Published: 11/02/2006
  • Est. Priority Date: 04/28/2005
  • Status: Active Grant
First Claim
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1. A method of forming a power semiconductor device, the method comprising:

  • forming a first oxide layer directly on a semiconductor region of a first conductivity type using a Plasma Enhanced Chemical Vapor Deposition (PECVD) method;

    forming a second oxide layer directly on the first oxide layer using a PECVD method to form a first passivation layer comprising the first and second oxide layers; and

    forming a second passivation layer on the first passivation layer.

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