NEW LOW DIELECTRIC (LOW K) BARRIER FILMS WITH OXYGEN DOPING BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD)
First Claim
1. A method for processing a substrate, comprising:
- providing substrate having conductive features formed in a dielectric material to a processing chamber;
depositing a first barrier layer comprising silicon, carbon, and nitrogen on the substrate;
depositing a second barrier layer on the first barrier layer, wherein the second barrier layer is a nitrogen free dielectric layer comprising silicon and carbon and deposited by reacting a processing gas comprising a carbon and oxygen containing compound and an oxygen-free organosilicon compound.
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Abstract
Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.
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Citations
16 Claims
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1. A method for processing a substrate, comprising:
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providing substrate having conductive features formed in a dielectric material to a processing chamber;
depositing a first barrier layer comprising silicon, carbon, and nitrogen on the substrate;
depositing a second barrier layer on the first barrier layer, wherein the second barrier layer is a nitrogen free dielectric layer comprising silicon and carbon and deposited by reacting a processing gas comprising a carbon and oxygen containing compound and an oxygen-free organosilicon compound. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for processing a substrate, comprising:
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depositing an phenyl containing silicon carbide layer on the substrate by reacting a first gas mixture comprising hydrogen, an inert gas, and dimethylphenylsilane in a plasma; and
depositing an oxygen-doped silicon carbide layer on the phenyl containing silicon carbide layer by reacting a second gas mixture comprising trimethylsilane and carbon dioxide. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification