apparatus and method for determining a chemical element

• US 20060249401A1
• Filed: 06/14/2004
• Published: 11/09/2006
• Est. Priority Date: 06/12/2003
• Status: Abandoned Application

• Current Assignee: Micronas Gmbh (TDK Corporation)
• Original Assignee: Micronas Gmbh (TDK Corporation)
• Inventors: Fleischer, Maximilian, Lehmann, Mirko
• Application Number:
  US10/867,177
• Publication Number:
  US 20060249401A1
• Time in Patent Office: Days
• US Class Current: 205/775
• CPC Class Codes: G01N 27/4143 Air gap between gate and channel, i.e. suspended gate [SG] FETs work function measurement per se G01N27/002

Abstract

Sensor for determining a chemical element and method for controlling such a sensor. The invention relates to a sensor (1) for determining a chemical element or a chemical compound (CO₂) in a supplied gaseous medium with

• a reaction area (9), on and/or in which the element or the compound brings about a chemical reaction that changes a characteristic parameter (for example the work function), Version 3* of the reaction area (9),
• a sensor element (5) that is placed in the sensor (1) to detect the change in the characteristic parameter,
• a signal output (11) at which an output signal (U_PS) corresponding to the chemical reaction detected by the sensor element can be detected as the measured variable, and
• a reaction control device (SC, 12) with an electrode system (10, 13) for applying a control voltage to affect a reaction in the reaction area (9).

To be able to use the sensor more variably and more reliably, it is proposed to produce a surface topology of such dimensions that during operation, a moisture film (16) of deposited ambient moisture continuously coats the surface area of both the electrode system and the reaction area. Possibilities in particular are correction of long-term changes from the influence of surrounding gases, checking probe functionality, and selective adjustment to measure given chemical variables.

Claims

1. Method for determining a chemical element or a chemical compound in a gaseous medium that is supplied to a sensor for detecting a change in a reaction area, comprising applying or changing a control voltage (U_C) at a moisture film over and/or in the reaction area to change the chemical composition in the reaction area of the sensor.

2. Method according to claim 1, where the chemical composition is changed electrochemically.

3. Method according to claim 1, where a characteristic parameter for determining the supplied chemical element or the supplied chemical compound is maintained at a 4esired, particularly a constant base value for determining a given chemical element or a given chemical compound, by selection of the control voltage (U_C).

4. Method according to claim 1, where the control voltage (U_C) is varied to check the functionality of the sensor, and at least one obtained output value (U_DS) is examined with regard to a difference from a reference value.

5. Method according to claim 1, where the control voltage (U_C) is adjusted to set the sensitivity of the sensor to determine a desired chemical element or a desired chemical compound.

6. Method according to claim 1, where a pH change is produced by the control voltage in the moisture film by reduction or oxidation of water or other substances in the moisture film.

7. Sensor for determining a chemical element or a chemical compound (CO₂) in a supplied gaseous medium, the sensor comprising:

a reaction area, on and/or in which the element or the compound brings about a chemical reaction that changes a characteristic parameter of the reaction area,

a sensor element that detects the change in the characteristic parameter,

a signal output at which an output signal (U_DS) corresponding to the chemical reaction detected by the sensor element can be detected as the measured variable, and

a reaction control device with an electrode system for applying a control voltage to affect a reaction in the reaction area, and

a surface topology/chemistry is provided of such dimensions/design that during operation a continuous moisture film of deposited moisture coats the surface area between at least two electrodes of the electrode system and the reaction area, and/or passes through the reaction area in this region.

8. Sensor according to claim 7, where the characteristic parameter is the work function.

9. Sensor according to claim 7, where it is an SGFET system.

10. Sensor according to claim 7, where the reaction control device is designed as a stabilizing device for electrochemically changing the characteristic parameter in the sensor layer.

11. Sensor according to claim 10, where the stabilizing device is designed to stabilize the characteristic parameter, particularly a pH value, by compensating for interfering influences.

12. Sensor according to claim 7, where the reaction control device is designed to check sensor function, as a test device for actively changing the characteristic parameter and measuring the change in the output signal (U_DS).

13. Sensor according to claim 7, where the reaction control device is designed as a test device for comparing at least one measured output signal (U_DS) with at least one reference value.

14. Sensor according to claim 7, where the reaction control device is designed as a sensitivity-adjusting device to actively change the characteristic parameter for determining a desired chemical element or a given chemical compound from a plurality of different determinable elements or compounds.

15. Sensor according to claim 14, where the reaction control device for adjusting the sensitivity has a reference table with reference values for the control voltage (U_C).

16. Sensor according to claim 7, in which the reaction control device is designed to change the ratios of hydrogen ions (H⁺) or of an OH group (OH⁻

) in and/or on the sensor layer.

17. Sensor according to claim 7, with an electrode system for applying a control voltage (U_C) in the reaction area, with the electrode system being adjacent to an electrode for detecting an output signal or a measured value for a change in the characteristic parameter.

18. Sensor according to claim 7, in which the sensor element is designed as an ion-selective field effect transistor or as a CCFET.

19. Sensor according to claim 18, in which the sensor element is formed by the gate of the field effect transistor.

20. Sensor according to claim 7, in which the reaction area is located as a sensor layer between the moisture film and the sensor element.

21. Sensor according to claim 7, in which there is a passage for the gaseous medium between the reaction area and the sensor element.

22. Sensor according to claim 7, in which the surface topology in the region of the continuous moisture film extends over a height range (Δ

h) in the nanometer range, in particular in the range of 0.1 to 100 nanometers.

23. Sensor according to claim 7, in which the surface topology in the region of the continuous moisture film extends over an edge or step height (Δ

h) that is smaller than the thickness of the moisture film, in particular in the range of a few nanometers.

24. Sensor according to claim 7, in which the surface topology in the region of the continuous moisture film has edge-free, rounded height transitions between different surface height peaks, particularly surface rounding with a rounding radius in the range of a few nanometers to a few tens of nanometers.

25. Sensor according to claim 7, comprising hydrophilic films between the electrodes and the reaction area.

26. Sensor according to claim 7, in which the electrode system for applying the control voltage is formed of at least two interdigitally intertwined electrodes.

27. Sensor according to claim 7, in which the reaction area has a sensitive layer coated by a moisture film, in or on which at least one electrode of the electrode system is located, with the sensor element being separated from the moisture film by a passage for the gaseous medium.

28. Sensor according to claim 27, in which a second electrode of the electrode system is separated from the first electrode of the electrode system, and is located within the sensitive layer or outside the sensitive layer and is separated from the moisture film.

29. Sensor according to claim 28, in which there is a buffer layer for preventing accumulation of acid, located between the second electrode separated from the sensitive layer and the sensitive layer.