Portable data storage apparatus

• US 20060249587A1
• Filed: 07/11/2006
• Published: 11/09/2006
• Est. Priority Date: 01/13/2004
• Status: Active Grant

• Current Assignee: Chil-Hee Chung, Jin-Hyeok Choi, Sam-Yong Bahng
• Original Assignee: Chil-Hee Chung, Jin-Hyeok Choi, Sam-Yong Bahng
• Inventors: Bahng, Sam-Yong, Chung, Chil-Hee, Choi, Jin-Hyeok
• Granted Patent: US 7,495,989 B2
• Time in Patent Office: Days
• US Class Current: 235/492
• CPC Class Codes: G11C 16/30 Power supply circuits
• CPC Class Codes: G11C 5/145 Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor G11C5/141 takes precedence

Abstract

A memory card comprises a non-volatile memory; and a power management unit for receiving an external supply voltage to supply an operating voltage to the non-volatile memory. The power management unit boosts/bypasses the external supply voltage based on whether the external supply voltage is lower than a detection voltage and then outputs the boosted/bypassed voltage as the operating voltage of the non-volatile memory.

Claims

1. A memory card comprising:

a non-volatile memory; and

a power management unit for receiving an external supply voltage to supply an operating voltage to the non-volatile memory,

wherein the power management unit boosts/bypasses the external supply voltage based on whether the external supply voltage is lower than a detection voltage and then outputs the boosted/bypassed voltage as the operating voltage of the non-volatile memory.

2. The memory card of claim 1, wherein the detection voltage is a voltage between a low voltage range and a high voltage range of the non-volatile memory.

3. The memory card of claim 1, wherein when the external supply voltage is higher than the detection voltage, the power management unit bypasses the external supply voltage and then outputs the bypassed voltage as the operating voltage.

4. The memory card of claim 1, wherein when the external supply voltage is lower than the detection voltage, the power management unit boosts the external supply voltage and then outputs the boosted voltage as the operating voltage.

5. The memory card of claim 4, wherein the detection voltage is lower than the detection voltage, the power management unit boosts the external supply voltage up to the operating voltage of the non-volatile memory.

6. The memory card of claim 1, wherein the non-volatile memory is a flash memory, a ferro-electric RAM, a magneto-resistive RAM, or a phase-change RAM.

7. The memory card of claim 1, wherein the power management unit comprises a passive capacitor and boosts the external supply voltage, the passive capacitor being installed as an individual element on a printed circuit board where the power management unit is installed.

8. The memory card of claim 1, wherein the non-volatile memory is a high-voltage non-volatile memory operating at a voltage between 2.7V to 3.6V, and the external supply voltage is between 1.65V to 3.6V.

9. The memory card of claim 1, wherein the power management unit includes a level detector circuit for detecting whether the external supply voltage is lower than the detection voltage and a voltage converter circuit for either boosting the external supply voltage or bypassing the external supply voltage based on a detection result of the level detector circuit.

10. The memory card of claim 9, wherein when the external supply voltage is higher than the detection voltage, the voltage converter circuit outputs the operating voltage following the external supply voltage.

11. The memory card of claim 9, wherein when the external supply voltage is lower than the detection voltage, the voltage converter circuit boosts the external supply voltage and outputs the boosted voltage as the operating voltage.

12. The memory card of claim 9, wherein the voltage converter circuit comprises:

a booster for operating in response to an output of the level detector circuit and boosting the external supply voltage, the boosted voltage being outputted as the operating voltage; and

a bypass circuit for bypassing the external supply voltage as the operating voltage in response to the output of the level detector circuit.

13. The memory card of claim 12, wherein the booster comprises a passive capacitor installed as an individual element on a printed circuit board where the power management unit is installed.

14. A memory card comprising:

a printed circuit board;

a passive capacitor installed at the printed circuit board;

a non-volatile memory chip installed at the printed circuit board; and

a controller circuit chip installed at the printed circuit board, for receiving an external supply voltage to supply an operating voltage to the non-volatile memory chip,

wherein the controller circuit chip performs a boosting operation using the passive capacitor when the external supply voltage is lower than a detection voltage, the boosted voltage being outputted as the operating voltage of the non-volatile memory chip; and

wherein the controller circuit chip bypasses the external supply voltage as the operating voltage when the external supply voltage is the same as or higher than the detection voltage.

15. The memory card of claim 14, wherein when the external supply voltage is lower than the detection voltage, the controller circuit chip boosts the external supply voltage up to the operating voltage using the passive capacitor.

16. The memory card of claim 14, wherein the non-volatile memory is a high-voltage non-volatile memory operating at a voltage between 2.7V to 3.6V, and the external supply voltage is between 1.65V to 3.6V.

17. The memory card of claim 14, wherein the detection voltage is a voltage between a low voltage range and a high voltage range of the non-volatile memory.

18. The memory card of claim 14, wherein the control circuit chip includes:

a level detector circuit for detecting whether the external supply voltage is lower than a detection voltage; and

a bypass circuit for bypassing the external supply voltage in response to an output of the level detector circuit.

19. The memory card of claim 18, wherein the control circuit chip further includes a booster that boosts the external supply voltage in response to the output of the level detector circuit and outputs the boosted voltage as the operating voltage.

20. A memory card comprising:

a non-volatile memory; and

a power management unit for receiving an external supply voltage to supply an operating voltage to the non-volatile memory,

wherein the power management unit judges whether the external supply voltage belongs to a low voltage range or a high voltage range; and

wherein when the external supply voltage belongs to the high voltage region, the power management unit bypasses the external supply voltage as the operating voltage.

21. The memory card of claim 20, wherein when the external supply voltage belongs to the low voltage region, the power management unit boosts the external supply voltage up to the operating voltage and outputs the boosted voltage as the operating voltage.