Multi-wavelength white light emitting diode

• US 20060249739A1
• Filed: 05/03/2006
• Published: 11/09/2006
• Est. Priority Date: 05/06/2005
• Status: Abandoned Application

• Current Assignee: Harvatek Corporation
• Original Assignee: Harvatek Corporation
• Inventors: Wang, Bily, Chuang, Jonnie, Lin, Chuan-Fa
• Application Number:
  US11/416,144
• Publication Number:
  US 20060249739A1
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: C09K 11/7787 Oxides C09K11/7785 takes precedence
• CPC Class Codes: C09K 11/7789 Oxysulfides
• CPC Class Codes: C09K 11/7794 Vanadates; Chromates; Molybdates; Tungstates
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: Y02B 20/00 Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Abstract

A multi-wavelength white light emitting diode uses a UV light emitting diode chip and a blue light emitting diode chip to excite a red phosphor and a green phosphor and generates a white light emitting diode having good color rendering. The multi-wavelength white light emitting diode uses a UV light emitting diode chip that emits light having a wavelength of between 350˜430 nm to excite a red phosphor to emit red light having a wavelength of between 600˜700 nm. The present invention then uses a blue light emitting diode chip that emits light having a wavelength between of 400˜500 nm to emit blue light and uses the blue light emitting diode chip to excite a green phosphor to emit green light having a wavelength of between 490˜560 nm. Mixing the red light, the blue light and the green light forms a white light.

Claims

1. A multi-wavelength white light emitting diode, comprising:

a UV light emitting diode chip, emitting a light having a wavelength between 350˜

430 nm;

a red phosphor, excited by the UV light emitting diode chip to emit red light;

a blue light emitting diode chip, emitting a blue light having a wavelength between 400˜

500 nm; and

a green phosphor, excited by the blue light emitting diode chip to emit green light;

wherein, mixing the red light, the blue light and the green light forms a white light emitting diode.

2. The multi-wavelength white light emitting diode of claim 1, wherein the UV light emitting diode chip is made of a nitride compound semiconductor.

3. The multi-wavelength white light emitting diode of claim 1, wherein the blue light emitting diode chip is made of a nitride compound semiconductor.

4. The multi-wavelength white light emitting diode of claim 1, wherein the UV light emitting diode chip and the blue light emitting diode chip are integrated into a bi-wavelength single chip.

5. The multi-wavelength white light emitting diode of claim 1, wherein the chemical composition of the red phosphor is Y202S:

Eu, YV04;

Eu, Y(V,P,B)04;

Eu, Ynb04;

Eu or Yta04;

Eu.

6. The multi-wavelength white light emitting diode of claim 1, wherein the chemical composition of the green phosphor is SrGa₂S₄:

Eu or Ca₈EuMnMg(SiO₄)C₁₂.

7. The multi-wavelength white light emitting diode of claim 1, wherein the wavelength of the red light is between 600˜

700 nm.

8. The multi-wavelength white light emitting diode of claim 1, wherein the wavelength of the red light is between 490˜

560 nm.

9. A multi-wavelength white light emitting diode, comprising:

a UV light emitting diode chip, emitting a light having a wavelength between 350˜

430 nm;

a red phosphor, excited by the UV light emitting diode chip to emit a red light;

a blue light emitting diode chip, emitting a blue light having a wavelength between 400˜

500 nm; and

a green phosphor, excited by the blue light-emitting diode chip to emit a green light;

a yellow phosphor, excited by the blue light-emitting diode chip to emit a yellow light;

wherein, mixing the red light, the blue light, the green light and the yellow light forms a white light.

10. The multi-wavelength white light emitting diode of claim 9, wherein the UV light emitting diode chip is made of a nitride compound semiconductor.

11. The multi-wavelength white light emitting diode of claim 9, wherein the blue light emitting diode chip is made of a nitride compound semiconductor.

12. The multi-wavelength white light emitting diode of claim 9, wherein the UV light emitting diode chip and the blue light emitting diode chip are integrated into a bi-wavelength single chip.

13. The multi-wavelength white light emitting diode of claim 9, wherein the chemical composition of the red phosphor is Y202S:

Eu, YV04;

Eu, Y(V,P,B)04;

Eu, Ynb04;

Eu or Yta04;

Eu.

14. The multi-wavelength white light emitting diode of claim 9, wherein the chemical composition of the green phosphor is SrGa₂S₄:

Eu or Ca₈EuMnMg(SiO₄)C₁₂.

15. The multi-wavelength white light emitting diode of claim 9, wherein the chemical composition of the yellow phosphor is YAG:

Ce or TbAG;

Ce.

16. The multi-wavelength white light emitting diode of claim 9, wherein the wavelength of the red light is between 600˜

700 nm.

17. The multi-wavelength white light emitting diode of claim 9, wherein the wavelength of the red light is between 490˜

560 nm.

18. The multi-wavelength white light emitting diode of claim 9, wherein the wavelength of the yellow light is between 550˜

600 nm.

19. A multi-wavelength white light emitting diode, comprising:

a UV light emitting diode chip, emitting a light having a wavelength between 350˜

430 nm;

a red phosphor, excited by the UV light emitting diode chip to emit a red light;

a green phosphor, excited by the UV light emitting diode chip to emit a green light; and

a blue light emitting diode chip, emitting a blue light having a wavelength between 400˜

500 nm;

wherein, mixing the red light, the blue light and the green light forms a white light.

20. The multi-wavelength white light emitting diode of claim 19, wherein the UV light emitting diode chip is made of a nitride compound semiconductor.

21. The multi-wavelength white light emitting diode of claim 19, wherein the blue light emitting diode chip is made of a nitride compound semiconductor.

22. The multi-wavelength white light emitting diode of claim 19, wherein the UV light emitting diode chip and the blue light emitting diode chip are integrated into in a bi-wavelength single chip.

23. The multi-wavelength white light emitting diode of claim 19, wherein the chemical composition of the red phosphor is Y202S:

Eu, YV04;

Eu, Y(V,P,B)04;

Eu, Ynb04;

Eu or Yta04;

Eu.

24. The multi-wavelength white light emitting diode of claim 19, wherein the chemical composition of the green phosphor is SrGa₂S₄:

Eu or Ca₈EuMnMg(SiO₄)C₁₂.

25. The multi-wavelength white light emitting diode of claim 19, wherein the wavelength of the red light is between 600˜

700 nm.

26. The multi-wavelength white light emitting diode of claim 19, wherein the wavelength of the red light is between 490˜

560 nm.

27. A multi-wavelength white light emitting diode, comprising:

a UV light emitting diode chip, emitting a light having a wavelength between 350˜

430 nm;

a red phosphor, excited by the UV light emitting diode chip to emit a red light;

a green phosphor, excited by the UV light emitting diode chip to emit a green light;

a blue light emitting diode chip, emitting a blue light having a wavelength between 400˜

500 nm; and

a yellow phosphor, excited by the blue light emitting diode chip to emit a yellow light;

wherein, mixing the red light, the blue light, the green light and the yellow light forms a white light.

28. The multi-wavelength white light emitting diode of claim 27, wherein the UV light emitting diode chip is made of a nitride compound semiconductor.

29. The multi-wavelength white light emitting diode of claim 27, wherein the blue light emitting diode chip is made of a nitride compound semiconductor.

30. The multi-wavelength white light emitting diode of claim 27, wherein the UV light emitting diode chip and the blue light emitting diode chip are integrated into a bi-wavelength single chip.

31. The multi-wavelength white light emitting diode of claim 27, wherein the chemical composition of the red phosphor is Y202S:

Eu, YV04;

Eu, Y(V,P,B)04;

Eu, Ynb04;

Eu or Yta04;

Eu.

32. The multi-wavelength white light emitting diode of claim 27, wherein the chemical composition of the green phosphor is SrGa₂S₄:

Eu or Ca₈EuMnMg(SiO₄)C₁₂.

33. The multi-wavelength white light emitting diode of claim 27, wherein the chemical composition of the yellow phosphor is YAG:

Ce or TbAG;

Ce.

34. The multi-wavelength white light emitting diode of claim 27, wherein the wavelength of the red light is between 600˜

700 nm.

35. The multi-wavelength white light emitting diode of claim 27, wherein the wavelength of the red light is between 490˜

560 nm.

36. The multi-wavelength white light emitting diode of claim 27, wherein the wavelength of the yellow light is between 550˜

600 nm.