Nuclear voltaic cell

• US 20060251204A1
• Filed: 08/29/2005
• Published: 11/09/2006
• Est. Priority Date: 11/21/2003
• Status: Abandoned Application

• Current Assignee: Francis Yu-Hei Tsang, Kwan Sze Kwok, Nathan Newman, Scott Arden Ploger, Tristan Dieter Juergens, Yale Deon Harker
• Original Assignee: Francis Yu-Hei Tsang, Kwan Sze Kwok, Nathan Newman, Scott Arden Ploger, Tristan Dieter Juergens, Yale Deon Harker
• Inventors: Kwok, Kwan Sze, Newman, Nathan, Juergens, Tristan Dieter, Ploger, Scott Arden, Harker, Yale Deon, Tsang, Francis Yu-Hei
• Application Number:
  US11/214,079
• Publication Number:
  US 20060251204A1
• Time in Patent Office: Days
• US Class Current: 376/320
• CPC Class Codes: G21H 1/04 Cells using secondary emission induced by alpha radiation, beta radiation, or gamma radiation

Abstract

The invention describes a product and a method for generating electrical power directly from nuclear power. More particularly, the invention describes the use of a liquid semiconductor as a means for efficiently converting nuclear energy, either nuclear fission and/or radiation energy, directly into electrical energy. Direct conversion of nuclear energy to electrical energy is achieved by placing nuclear material in close proximity to a liquid semiconductor. Nuclear energy emitted from the nuclear material, in the form of fission fragments or radiation, enters the liquid semiconductor and creates electron-hole pairs. By using an appropriate electrical circuit an electrical load is applied and electrical energy generated as a result of the creation of the electron-hole pairs.

Claims

1. A nuclear voltaic array comprising a plurality of nuclear voltaic cells arranged into a stack, said stack comprising at least:

a first layer comprising a substrate having a first surface, wherein a coating of fissile material is deposited on said first surface, and further wherein a coating of a first metallic contact is deposited on said coating of fissile material;

a second layer comprising a liquid semiconductor, wherein said second layer is adjacent to and in contact with said first layer, wherein said first metallic contact forms a Schottky contact with said liquid semiconductor in said second layer;

a third layer comprising a substrate having deposited on its two planar surfaces a second metallic contact and a third metallic contact, wherein said second metallic contact of said third layer is adjacent to and in contact with said second layer, and further wherein said second metallic contact forms a low resistance or ohmic contact with said liquid semiconductor in said second layer;

a fourth layer comprising a liquid semiconductor, wherein said fourth layer is adjacent to and in contact with said third metallic contact of said third layer and forms a low resistance or ohmic contact with said liquid semiconductor in said fourth layer; and

a fifth layer comprising a third substrate having coated on a first surface a coating of fissile material, wherein said coating of fissile material is coated with a fourth metallic contact, and further wherein said fourth metallic contact of said fifth layer is adjacent to and in contact with said fourth layer and forms a Schottky contact with said liquid semiconductor in said fourth layer.

2. A nuclear voltaic array according to claim 1, wherein each of said metallic contacts is connected together by an electrical circuit.

3. A nuclear voltaic array according to claim 1, wherein electrical power is generated when a load is applied to said electrical circuit.

4. A nuclear voltaic array according to claim 1, wherein said liquid semiconductor is a p-type semiconductor.

5. A nuclear voltaic array according to claim 1, wherein said liquid semiconductor is an n-type semiconductor.

6. A nuclear voltaic array according to claim 1, wherein a plurality of nonconductive spacers are placed between said first metallic contact layer and said second metallic contact layer with said liquid semiconductor interspersed there between.

7. A nuclear voltaic array according to claim 1, wherein said liquid semiconductor flows between said first metallic contact layer and said second metallic contact layer.

8. A nuclear voltaic battery comprising a plurality of nuclear voltaic cells arranged into a stack, said stack comprising at least:

a first layer comprising a substrate having a first surface, wherein a coating of radioactive isotope is deposited on said first surface, and further wherein a coating of a first metallic contact is deposited on said coating of radioactive isotope;

a second layer comprising a liquid semiconductor, wherein said second layer is adjacent to and in contact with said first layer, wherein said first metallic contact forms a Schottky contact with said liquid semiconductor in said second layer;

a third layer comprising a substrate having deposited on its two planar surfaces a second metallic contact and a third metallic contact, wherein said second metallic contact of said third layer is adjacent to and in contact with said second layer, and further wherein said second metallic contact forms a low resistance or ohmic contact with said liquid semiconductor in said second layer;

a fourth layer comprising a liquid semiconductor, wherein said fourth layer is adjacent to and in contact with said third metallic contact of said third layer and forms a low resistance or ohmic contact with said liquid semiconductor in said fourth layer; and

a fifth layer comprising a third substrate having coated on a first surface a layer of radioactive isotope, wherein said coating of radioactive isotope is coated with a fourth metallic contact, and further wherein said fourth metallic contact of said fifth layer is adjacent to and in contact with said fourth layer and forms a Schottky contact with said liquid semiconductor in said fourth layer.

9. A nuclear voltaic battery according to claim 8, wherein each of said metallic contacts are connected together by an electrical circuit.

10. A nuclear voltaic battery according to claim 8, wherein electrical power is generated when an electrical load is applied to said electrical circuit.

11. A nuclear voltaic battery according to claim 8, wherein said liquid semiconductor is a p-type semiconductor.

12. A nuclear voltaic battery according to claim 8, wherein said liquid semiconductor is an n-type semiconductor.

13. A nuclear voltaic battery according to claim 8, wherein a plurality of nonconductive spacers are placed between said first metallic contact layer and said second metallic contact layer with said liquid semiconductor interspersed there between.

14. A nuclear voltaic battery according to claim 8, wherein said liquid semiconductor flows between said first metallic contact layer and said second metallic contact layer.

15. A nuclear voltaic battery, comprising a plurality of nuclear voltaic cells arranged into a stack, said stack comprising at least:

a first substrate having on its surface a first metallic contact layer;

a second substrate having on its surface a second metallic contact layer;

said first substrate and said second substrate are positioned so that said first metallic contact layer and said second metallic contact layer are facing each other with a channel between said first metallic contact layer and said second metallic contact layer, wherein said channel between said first metallic contact layer and said second metallic contact layer has a first end and a second end;

a liquid semiconductor interposed in said channel between said first metallic contact layer and said second metallic contact layer, wherein said first metallic contact layer forms a Schottky contact with the liquid semiconductor, and said second metallic contact layer forms a low resistance or ohmic contact with said liquid semiconductor;

said liquid semiconductor containing a solution of a radioactive isotope;

a closed loop connecting said first end of said channel between said first metallic contact layer and said second metallic contact layer to said second end of said channel between said first metallic contact layer and said second metallic contact layer; and

a pump connected to said closed loop for pumping said liquid semiconductor through said channel between said first metallic contact layer and said second metallic contact layer and through said closed loop.

16. A nuclear voltaic battery according to claim 15, further comprising a heat extractor connected to said closed loop, wherein said liquid semiconductor flows through said heat extractor and is cooled by said heat extractor.

17. A nuclear voltaic cell array comprising a plurality of nuclear voltaic cells, wherein:

said plurality of nuclear voltaic cells are stacked on top of each other with a perforated metal sheet conductor placed between each of said plurality of nuclear voltaic cells.

18. A nuclear voltaic cell array according to claim 17, wherein each of said perforated metal sheet conductors is connected together by an electrical circuit.

19. A nuclear voltaic cell array according to claim 18, wherein electrical power is generated when a load is applied to said electrical circuit.

20. A nuclear voltaic cell array according to claim 19, wherein said plurality of nuclear voltaic cells each comprise at least a first metallic contact layer with a layer of fissile material deposited thereon, and a second metallic contact layer positioned facing said first metallic contact layer, with a liquid semiconductor interposed in between, wherein said first metallic contact layer forms a Schottky contact with said liquid semiconductor, and said second metallic contact layer forms a low resistance or ohmic contact with said liquid semiconductor.

21. A nuclear voltaic cell array according to claim 19, wherein said plurality of nuclear voltaic cells each comprise at least a first metallic contact layer with a layer of radioactive isotope deposited thereon, and a second metallic contact layer positioned facing said first metallic contact layer, with a liquid semiconductor interposed in between, wherein said first metallic contact layer forms a Schottky contact with said liquid semiconductor, and said second metallic contact layer forms a low resistance or ohmic contact with said liquid semiconductor.

22. A nuclear voltaic cell array according to claim 19, wherein said plurality of nuclear voltaic cells each comprise at least a first metallic contact layer, and a second metallic contact layer positioned facing said first metallic contact layer, with a liquid semiconductor interposed in between, wherein said liquid semiconductor contains a solution of fissile material and said first metallic contact layer forms a Schottky contact with said liquid semiconductor, and said second metallic contact layer forms a low resistance or ohmic contact with said liquid semiconductor.

23. A nuclear voltaic cell array according to claim 19, wherein said plurality of nuclear voltaic cells each comprise at least a first metallic contact layer, and a second metallic contact layer positioned facing said first metallic contact layer, with a liquid semiconductor interposed in between, wherein said liquid semiconductor contains a solution of a radioactive isotope and said first metallic contact layer forms a Schottky contact with said liquid semiconductor, and said second metallic contact layer forms a low resistance or ohmic contact with said liquid semiconductor