Contact metallization scheme using a barrier layer over a silicide layer
First Claim
1. A method for depositing a material on a contact level feature formed on a substrate, comprising:
- providing a substrate that has one or more contact level features that have an exposed suicide layer formed on a silicon containing region;
depositing a barrier layer over the surface of the exposed suicide layer, wherein the depositing the barrier layer comprises;
depositing a first metal layer on the exposed silicide layer; and
depositing a second metal layer over the first metal layer, wherein the second metal layer contains a metal selected from a group consisting of ruthenium (Ru), cobalt (Co), nickel (Ni), rhodium (Rh), iridium (Ir), palladium (Pd) and platinum (Pt); and
filling the contact level feature with a metal containing layer.
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Accused Products
Abstract
Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact feature and then filing the layer using an PVD, CVD, ALD, electrochemical plating process (ECP) and/or electroless deposition processes. In one embodiment, the barrier layer has a catalytically active surface that will allow the electroless deposition of a metal on the barrier layer. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one aspect, the contact level feature is filled with a copper alloy by use of an electroless deposition process. In another aspect, a copper alloy is used to from a thin conductive copper layer that is used to subsequently fill features with a copper containing material by use of an ECP, PVD, CVD, and/or ALD deposition process. In one embodiment, a portion of the barrier layer is purposely allowed to react with traces of residual oxide at the silicon junction of the contact level feature to form a low resistance connection.
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Citations
35 Claims
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1. A method for depositing a material on a contact level feature formed on a substrate, comprising:
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providing a substrate that has one or more contact level features that have an exposed suicide layer formed on a silicon containing region;
depositing a barrier layer over the surface of the exposed suicide layer, wherein the depositing the barrier layer comprises;
depositing a first metal layer on the exposed silicide layer; and
depositing a second metal layer over the first metal layer, wherein the second metal layer contains a metal selected from a group consisting of ruthenium (Ru), cobalt (Co), nickel (Ni), rhodium (Rh), iridium (Ir), palladium (Pd) and platinum (Pt); and
filling the contact level feature with a metal containing layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method for depositing a material on a contact level feature formed on a substrate, comprising:
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providing a substrate that has one or more contact level features that have an exposed silicide layer formed on a doped silicon containing region;
depositing a barrier layer over the surface of the exposed silicide layer, wherein the depositing the barrier layer comprises;
depositing a first metal layer on the exposed silicide layer; and
depositing a second metal layer over the first metal layer, wherein the second metal layer contains a metal selected from a group consisting of ruthenium (Ru), cobalt (Co), nickel (Ni), rhodium (Rh), iridium (Ir), palladium (Pd) and platinum (Pt);
electrolessly depositing a first copper containing layer on the barrier layer; and
depositing a second copper containing layer on the first copper containing layer to fill the one or more contact level features. - View Dependent Claims (20, 21, 22, 23, 24)
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25. A method for depositing a material on a contact level feature formed on a substrate, comprising:
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depositing a barrier layer over the surfaces of one or more contact level features formed on the substrate; and
electrolessly depositing a copper containing layer on the barrier layer using a metal layer electroless deposition solution, wherein the metal layer electroless deposition solution comprises EDTA and copper ions at a concentration ratio of less than about 6;
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26. A method for depositing a material on a contact level feature formed on a substrate, comprising:
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electrolessly depositing a first metal containing layer on a doped silicon region on a surface of a substrate;
forming a contact level interconnect feature, wherein the process of forming the contact level interconnect comprises;
depositing a dielectric layer over a surface of the substrate and the first metal containing layer; and
forming one or more contact level features in the dielectric layer using conventional semiconductor processing methods, wherein the first metal containing layer is exposed at the bottom of one or more of the contact level features;
depositing a barrier layer over the surface of the first metal layer, wherein the depositing the barrier layer comprises;
depositing a second metal layer over the first metal layer, wherein the second metal layer contains a metal selected from a group consisting of ruthenium (Ru), cobalt (Co), nickel (Ni), rhodium (Rh), iridium (Ir), palladium (Pd) and platinum (Pt); and
electrolessly depositing a copper containing layer on the barrier layer. - View Dependent Claims (27, 28, 29, 30, 31)
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32. A method for depositing a material on a contact level feature formed on a substrate, comprising:
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providing a substrate that has one or more contact level features that have an exposed doped silicon containing region;
depositing a first metal layer on the doped silicon containing region;
depositing a barrier layer over the surface of the first metal layer, wherein the depositing the barrier layer comprises;
depositing a second layer over the first layer, wherein the second layer comprises ruthenium and tantalum; and
filling the contact level feature with a metal containing layer. - View Dependent Claims (33, 34, 35)
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Specification