In-situ silicidation metallization process

• US 20060251801A1
• Filed: 03/20/2006
• Published: 11/09/2006
• Est. Priority Date: 03/18/2005
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Weidman, Timothy W., Shanmugasundram, Arulkumar, Stewart, Michael P., Gandikota, Srinivas, Gelatos, Avgerinos V. (Jerry)
• Application Number:
  US11/385,484
• Publication Number:
  US 20060251801A1
• Time in Patent Office: Days
• US Class Current: 427/99.500
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: C23C 16/0227 by cleaning or etching
• CPC Class Codes: C23C 16/0281 of metallic sub-layers C23C16/029 takes precedence
• CPC Class Codes: C23C 16/045 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 16/14 Deposition of only one other metal element
• CPC Class Codes: C23C 18/1608 from pretreatment step, i.e. selective pre-treatment
• CPC Class Codes: C23C 18/1651 Two or more layers only obtained by electroless plating
• CPC Class Codes: C23C 18/1653 Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
• CPC Class Codes: C23C 18/1678 Heating of the substrate
• CPC Class Codes: C23C 18/31 Coating with metals
• CPC Class Codes: C23C 18/32 Coating with nickel, cobalt or mixtures thereof with phosphorus or boron C23C18/50 takes precedence
• CPC Class Codes: C23C 18/34 using reducing agents
• CPC Class Codes: C23C 18/38 Coating with copper
• CPC Class Codes: C23C 18/40 using reducing agents
• CPC Class Codes: C23C 18/48 Coating with alloys
• CPC Class Codes: C25D 5/34 Pretreatment of metallic surfaces to be electroplated
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 21/02074 the processing being a planarization of conductive layers
• CPC Class Codes: H01L 21/28518 the conductive layers comprising silicides H01L21/28537 takes precedence
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/288 : from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/2885 : using an external electrical current, i.e. electro-deposition
• CPC Class Codes: H01L 21/76814 : post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76843 : formed in openings in a dielectric
• CPC Class Codes: H01L 21/76844 : Bottomless liners
• CPC Class Codes: H01L 21/76846 : Layer combinations
• CPC Class Codes: H01L 21/76847 : the layer being positioned within the main fill metal
• CPC Class Codes: H01L 21/76849 : the layer being positioned on top of the main fill metal
• CPC Class Codes: H01L 21/76855 : After-treatment introducing at least one additional element into the layer
• CPC Class Codes: H01L 21/76856 : by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
• CPC Class Codes: H01L 21/76861 : Post-treatment or after-treatment not introducing additional chemical elements into the layer
• CPC Class Codes: H01L 21/76862 : Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation
• CPC Class Codes: H01L 21/76874 : for electroless plating
• CPC Class Codes: H01L 21/76877 : Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 21/76879 : by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288
• CPC Class Codes: H01L 23/53238 : Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Embodiments of the invention provide a simplified method of filling contact level features formed in a semiconductor device. In general the method includes a novel method of forming a contact level feature that contains a silicide interface and a tungsten CVD deposited layer. The processes discussed below are less complex and less time consuming than other conventional contact level interconnect formation processes and thus will have an improved device yield.

Claims

1. A method for depositing a material on a substrate, comprising:

providing a substrate that has one or more contact level features that have an exposed doped silicon containing region;

selectively depositing a metal containing layer over a surface of the exposed doped silicon containing regions; and

depositing a tungsten layer on the metal layer at a temperature between about 300°

C. and about 450°

C., wherein during the process of depositing tungsten layer a metal silicide is formed at the surface of the exposed doped silicon containing region.

2. The method of claim 1, wherein the metal containing layer contains an element selected from a group consisting of cobalt and nickel.

3. The method of claim 1, wherein the tungsten layer is deposited using a tungsten hexafluoride (WF₆) containing gas.

4. The method of claim 1, wherein the process of selectively depositing a metal containing layer comprises electrolessly depositing a nickel-containing layer having a thickness between about 10 angstroms and about 100 angstroms.

5. A method for depositing a material on a substrate, comprising:

providing a silicon containing substrate that has one or more contact level features that have an exposed doped silicon containing region;

pretreating the exposed doped silicon containing region, wherein the pretreating process is adapted to remove an oxide layer from the exposed doped silicon containing region;

depositing a metal containing layer over a surface of the exposed doped silicon containing regions; and

depositing a tungsten layer over the metal containing layer at a temperature between about 300°

C. and about 450°

C., wherein during the tungsten layer deposition process a metal silicide is formed.

6. The method of claim 5, wherein the metal containing layer contains an element selected from a group consisting of cobalt and nickel.

7. The method of claim 5, wherein the tungsten layer is deposited using a tungsten hexafluoride (WF₆) containing gas.

8. The method of claim 5, further comprises depositing a cobalt containing layer on the nickel containing layer prior to depositing the tungsten layer.

9. The method of claim 5, wherein the process of depositing a metal containing layer comprises electrolessly depositing a nickel-containing layer having a thickness between about 10 angstroms and about 100 angstroms.

10. A method for depositing a material on a substrate, comprising:

providing a silicon containing substrate that has one or more contact level features that have an exposed doped silicon containing region;

pretreating the exposed doped silicon containing region, wherein the pretreating process is adapted to remove an oxide layer from the exposed doped silicon containing region;

depositing a nickel containing layer over the bottom surface of the one or more contact level features;

forming a nickel silicide layer by exposing the deposited nickel containing layer and silicon containing substrate to temperatures greater the 250°

C.;

depositing a cobalt containing layer over the nickel silicide layer; and

depositing a tungsten layer on the cobalt containing layer.

11. The method of claim 10, wherein the tungsten layer is deposited using a tungsten hexafluoride (WF₆) containing gas.

12. The method of claim 10, wherein the cobalt containing layer is a cobalt-tungsten alloy.

13. The method of claim 10, wherein the process of depositing a nickel containing layer comprises electrolessly depositing a nickel-containing layer having a thickness between about 10 angstroms and about 100 angstroms.