OLEDs utilizing direct injection to the triplet state

• US 20060251921A1
• Filed: 05/06/2005
• Published: 11/09/2006
• Est. Priority Date: 05/06/2005
• Status: Abandoned Application

• Current Assignee: The Trustees of Princeton University (Princeton University), Universal Display Corporation, University of Southern California
• Original Assignee: Universal Display Corporation
• Inventors: Forrest, Stephen, Thompson, Mark E., Brown, Julia J.
• Application Number:
  US11/123,155
• Publication Number:
  US 20060251921A1
• Time in Patent Office: Days
• US Class Current: 428/690
• CPC Class Codes: H10K 2101/10 Triplet emission
• CPC Class Codes: H10K 2101/30 Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
• CPC Class Codes: H10K 50/11 characterised by the electroluminescent [EL] layers
• CPC Class Codes: H10K 50/14 Carrier transporting layers

Abstract

The present invention relates to OLEDs utilizing direct injection to the triplet state. The present invention also relates to OLEDs utilizing resonant injection and/or stepped energy levels.

Claims

1. An organic light emitting device comprising:

a) an anode;

b) a cathode;

c) an emissive layer disposed between the anode and the cathode, the emissive layer comprising

i) a phosphorescent dopant having a ground state, a triplet state, and a higher lying molecular excited state; and

ii) an emissive layer host having an emissive layer host HOMO energy level and an emissive layer host LUMO energy level;

d) a transport layer disposed adjacent to the emissive layer, the transport layer comprising a first material having a first material HOMO energy level and a first material LUMO energy level, wherein an electron-hole pair recombine, without populating the higher lying molecular excited state, across an energy separation that is about equal to the triplet energy of the phosphorescent dopant.

2. The device of claim 1, wherein the energy separation between the emissive layer host LUMO and the phosphorescent dopant ground state is about equal to the triplet energy of the phosphorescent dopant.

3. The device of claim 1, wherein the emissive layer host LUMO is no more than about 0.1 eV below the triplet state and at least about 0.2 eV below the higher lying molecular excited state.

4. The device of claim 1, wherein the transport layer is an electron transport layer, and the first material LUMO is no more than about 0.1 eV below the triplet state and at least about 0.2 eV below the higher lying molecular excited state.

5. The device of claim 1, wherein the emissive layer host HOMO is no more than about 0.1 eV above, and no more than about 0.2 eV below the phosphorescent dopant ground state.

6. The device of claim 1, wherein the transport layer is a hole transport layer, and the first material HOMO is no more than about 0.1 eV above, and no more than about 0.2 eV below the phosphorescent dopant ground state.

7. The device of claim 1, comprising two transport layers, an electron transport layer comprising an electron transport material and a hole transport layer having a hole transport material, wherein at least one of the emissive layer host LUMO and the LUMO of the electron transport material is no more than 0.1 eV below the triplet state and at least about 0.2 eV below the higher lying molecular excited state, and at least one of the emissive layer host HOMO and the HOMO of the hole transport material is no more than about 0.1 eV above, and no more than about 0.2 eV below the phosphorescent dopant ground state.

8. The device of claim 1, wherein the triplet energy of the phosphorescent dopant is less than about 500 nm.

9. An organic light emitting device comprising:

a) an anode;

b) a cathode;

c) an emissive layer disposed between the anode and the cathode, the emissive layer comprising

i) a phosphorescent dopant having a ground state, a triplet state, and a higher lying molecular excited state; and

ii) an emissive layer host having an emissive layer host HOMO energy level and an emissive layer host LUMO energy level;

d) a transport layer disposed adjacent to the emissive layer, the transport layer comprising a plurality of materials, each material having a HOMO energy level and a LUMO energy level, wherein at least one energy level of each of the plurality of materials together form a series of energy steps leading to at least one energy level in the emissive layer, wherein each step in the series of energy steps is no more than about 0.2 eV.

10. The device of claim 9, wherein the transport layer is a hole transport layer and the HOMO energy levels of the plurality of materials form a series of energy steps leading to the emissive layer host HOMO or the phosphorescent dopant ground state, wherein each step in the series of energy steps is no more than about 0.2 eV.

11. The device of claim 9, wherein the transport layer is an electron transport layer and the LUMO energy levels of the plurality of materials form a series of energy steps leading to the emissive layer host LUMO, the triplet state, or the higher lying molecular excited state, wherein each step in the series of energy steps is no more than about 0.2 eV.

12. The device of claim 9, wherein the transport layer comprises a sublayer disposed adjacent to the emissive layer, wherein the sublayer comprises a transport layer host that is doped with a mixture of more than one material of the plurality of materials.

13. The device of claim 12, wherein the transport layer host is doped with a mixture of all of the plurality of materials.

14. The device of claim 13, wherein the transport layer host is doped with a mixture of all of the plurality of materials in about equal proportions.

15. The device of claim 9, wherein the transport layer comprises a plurality of adjacent sublayers, each sublayer comprising a transport layer host doped with a single material of the plurality of materials.

16. The device of claim 9, wherein the entire transport layer is doped with one or more materials of the plurality of materials.

17. The device of claim 9, wherein the transport layer comprises:

a) an un-doped sublayer disposed adjacent to

b) a doped sublayer comprising one or more materials of the plurality of materials, the doped sublayer disposed adjacent to

c) the emissive layer.

18. The device of claim 9, wherein one or more materials of the plurality of materials is deposited as a neat layer to form the series of energy steps.

19. A method comprising:

a) depositing an anode over a substrate;

b) depositing an emissive layer over the anode, wherein the emissive layer comprises

i) a phosphorescent dopant having a ground state, a triplet state, and a higher lying molecular excited state; and

ii) an emissive layer host having an emissive layer host HOMO energy level and an emissive layer host LUMO energy level;

c) depositing an electron transport layer over the emissive layer, wherein the electron transport layer comprises an electron transport material having an electron transport LUMO energy level;

d) depositing a cathode over the electron transport layer,

wherein at least one of the emissive layer host LUMO and the electron transport LUMO is no more than about 0.1 eV below the triplet state and at least about 0.2 eV below the higher lying molecular excited state.