Non-uniform ion implantation apparatus and method thereof

• US 20060252217A1
• Filed: 12/16/2005
• Published: 11/09/2006
• Est. Priority Date: 05/04/2005
• Status: Active Grant

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Rouh, Kyoung Bong, Jin, Seung Woo, Lee, Min Yong
• Granted Patent: US 7,365,406 B2
• Time in Patent Office: Days
• US Class Current: 438/369
• CPC Class Codes: H01J 37/3171 for ion implantation plasma immersion ion implantation H01J37/32412
• CPC Class Codes: H01L 21/265 producing ion implantation

Abstract

A non-uniform ion implantation apparatus comprises a wide ion beam generator configured to generate a plurality of wide ion beams to irradiate at least two regions on the entire area of a wafer, and a wafer rotating device configured to rotate the wafer in a predetermined direction while the wide ion beams generated by the wide ion beam generator are irradiated to the wafer. Among the wide ion beams, at least one wide ion beam has a different dose from that of at least one different wide ion beam. Since the wide ion beams are irradiated at different doses to the wafer, a smooth circular border is formed between the regions to which the impurity ions are implanted to different concentrations. Since the position of the wafer is suitably changed for the wide ion beams, it is possible to control disposition of the regions implanted with the impurity ions of different concentrations.

Claims

1. An ion implantation apparatus, comprising:

a wide ion beam generator configured to generate a plurality of wide ion beams to irradiate a plurality of regions on a wafer, the plurality of wide ion beams including first and second wide ion beams, the plurality of regions including first and second regions; and

a wafer rotating device configured to rotate the wafer in a predetermined direction while the wide ion beams generated by the wide ion beam generator are irradiated to the wafer.

2. The apparatus as set forth in claim 1, wherein the first wide ion beam has a different dose from that of the second wide ion beam.

3. A non-uniform ion implantation apparatus, comprising:

a wide ion beam generator configured to generate a plurality of wide ion beams comprising first and second wide ion beams to irradiate first and second regions of a wafer, respectively; and

a wafer rotating device configured to rotate the wafer in a predetermined direction while the wide ion beams generated by the wide ion beam generator are irradiated to the wafer.

4. The apparatus as set forth in claim 3, wherein the first and second wide ion beams have different doses.

5. The apparatus as set forth in claim 3, wherein the first and second regions together occupy half an area of the wafer.

6. The apparatus as set forth in claim 5, wherein the first and second regions are divided by a border in a vertical direction.

7. The apparatus as set forth in claim 6, wherein the first region is adjacent to a periphery of the wafer with respect to the border, and the second region is adjacent to a central region of the wafer with respect to the border.

8. The apparatus as set forth in claim 3, wherein the first and second regions together occupy an entire area of the wafer.

9. The apparatus as set forth in claim 8, wherein the first and second regions are divided by first and second borders in a vertical direction.

10. The apparatus as set forth in claim 9, wherein the first region is adjacent to a periphery of the wafer with respect to the first and second borders, and the second region is adjacent to a central region of the wafer with respect to the first and second borders.

11. A non-uniform ion implantation apparatus, comprising:

a wide ion beam generator including a first and second magnetron configured to generate wide ion beams to irradiate a region of a wafer between the first and second magnetron, the first magnetron including a plurality of first unit magnetrons, the second magnetron including a plurality of second unit magnetrons, each group of the second unit magnetrons facing and being spaced a predetermined distance from each group of the first unit magnetrons; and

a wafer rotating device configured to rotate the wafer in a predetermined direction while the wide ion beams generated by the wide ion beam generator are irradiated to the wafer.

12. The apparatus as set forth in claim 11, wherein the plurality of first unit magnetrons includes a first group of the first unit magnetrons to which a first bias is applied, and a second group of the first unit magnetrons to which a second bias different from the first bias is applied, and

the plurality of second unit magnetron includes a first group of the second unit magnetrons to which the first bias is applied, and a second group of the second unit magnetrons to which the second bias different from the first bias is applied.

13. The apparatus as set forth in claim 12, wherein the first group of the first unit magnetrons faces the first group of the second unit magnetrons, such that a first wide ion beam having a first dose is generated between the first group of first unit magnetrons and the first group of second unit magnetrons, and

the second group of the first unit magnetrons faces the second group of the second unit magnetrons such that a second wide ion beam having a second dose different from the first dose is generated between the second group of first unit magnetrons and the second group of second unit magnetrons.

14. The apparatus as set forth in claim 11, wherein the first unit magnetrons includes first and second groups of the first unit magnetrons separated from each other, to which a first bias is applied, and a third group of the first unit magnetrons disposed between the first and second groups of the first unit magnetrons, to which a second bias different from the first bias is applied.

15. The apparatus as set forth in claim 14, wherein the first and second groups of the first unit magnetrons respectively face the first and second groups of the second unit magnetrons such that a first wide ion beam having a first dose is respectively generated between the first and second groups of the first unit magnetrons and the first and second groups of the second unit magnetrons, and

the third group of first unit magnetrons faces the third group of the second unit magnetrons, such that a second wide ion beam having a second dose different from the first dose is generated between the third group of the first unit magnetrons and the third group of the second unit magnetrons.

16. A non-uniform ion implantation method, comprising:

providing a substrate at an initial position;

irradiating a plurality of wide ion beams to the substrate, the plurality of wide ion beams comprising first and second wide ion beams having first and second doses, respectively; and

rotating the substrate in a predetermined direction while the wide ion beams are irradiated to the substrate.

17. The method as set forth in claim 16, further comprising:

positioning the wafer such that the wide ion beams irradiate no more than half of the area of the substrate.

18. The method as set forth in claim 17, wherein the first wide ion beam irradiates the region adjacent to a periphery of the wafer, and the second wide ion beam irradiates a region adjacent to a central region of the wafer.

19. The method as set forth in claim 17, further comprising:

moving the substrate by a predetermined distance vertically or horizontally from initial position of the substrate.

20. The method as set forth in claim 16, wherein the first ion beam is split into at least first and sections at first and second sides of the second wide ion beam.

21. The method as set forth in claim 20, further comprising:

positioning the wafer such that the wide ion beams irradiate the entire area of the substrate.

22. The method as set forth in claim 21, wherein the first wide ion beam irradiates a region adjacent to either side of the substrate, and the second wide beam irradiates a region adjacent to the central region of the substrate.

23. The method as set forth in claim 21, further comprising;

moving the substrate by a predetermined distance vertically or horizontally from the initial position of the substrate.

24. The method as set forth in claim 16, wherein the substrate is rotated at a rotational speed of about 20 to 1,500 rpm.

25. The method as set forth in claim 16, wherein the substrate is rotated a plurality of times.

26. A non-uniform ion implantation method, comprising:

irradiating at least first and second wide ion beams to a substrate, the first and second wide ion beams having different doses; and

rotating the substrate in a predetermined direction while the wide ion beams are irradiated to the wafer.