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FOCUSED ION BEAM DEPOSITION

  • US 20060252255A9
  • Filed: 07/30/2002
  • Published: 11/09/2006
  • Est. Priority Date: 12/29/2000
  • Status: Active Grant
First Claim
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1. A system comprising:

  • a chamber configured to house a substrate for processing;

    an energy source coupled to the chamber;

    a system controller configured to control the introduction of at least one metal to a focused ion beam and to control the introduction of the focused ion beam from the energy source; and

    a memory coupled to the controller comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of the system, the computer-readable program comprising;

    instructions for controlling the energy source and for introducing the metal into a focused ion beam which is introduced into the chamber over the substrate in which the metal from the focused ion beam forms at least one layer over the substrate; and

    controlling the heat which is applied to the at least one layer.

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