Semiconductor structures having via structures between planar frontside and backside surfaces and methods of fabricating the same
First Claim
1. A method of forming a semiconductor structure comprising:
- forming vias through a semiconductor substrate having a frontside surface and a backside surface;
depositing conductive material in the vias to establish a conductive path between the frontside surface and the backside surface;
filling the vias with a core material; and
removing portions of the conductive material and the core material so the backside surface of the substrate is substantially planar with respect to the conductive material and the core material.
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Accused Products
Abstract
Methods of backside planarization processes have been developed to gain a high resolution backside process lithography and to make possible the development of dual faced MMICs and circuits. Two different processes have been employed to planarize via structures of various depths, one including epoxy-fill via structures with depths of 10 mils and the other solid-metal via structures with depths of 3.5 mils. Application of a wafer fabricated using methods of the present invention has been demonstrated in a monolithic circuit, where bias control to the frontside of the wafer was established by solder bumps on the planarized backside surface of a wafer including epoxy-filled via structures.
115 Citations
50 Claims
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1. A method of forming a semiconductor structure comprising:
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forming vias through a semiconductor substrate having a frontside surface and a backside surface;
depositing conductive material in the vias to establish a conductive path between the frontside surface and the backside surface;
filling the vias with a core material; and
removing portions of the conductive material and the core material so the backside surface of the substrate is substantially planar with respect to the conductive material and the core material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of forming a semiconductor structure comprising:
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forming vias through a semiconductor substrate having a frontside surface and a backside surface;
filling the vias with material, including at least partially with a conductive material to establish a conductive path between the frontside surface and the backside surface; and
removing portions of the conductive material so the backside surface of the substrate is substantially planar with respect to the conductive material. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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25. A semiconductor structure comprising:
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a substrate having a frontside surface and a substantially planar backside surface; and
a plurality of via structures through the substrate, having an electrically conductive frontside structure forming part of the frontside surface, and an electrically conductive core structure electrically connected with the frontside structure and including a backside structure forming part of the backside surface. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
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44. A semiconductor structure comprising:
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a substrate having a frontside surface and a substantially planar backside surface; and
a plurality of vias through the substrate, the vias filled with a via material, including at least partially with a conductive material to establish a conductive path between the frontside surface and the backside surface, the backside surface of the substrate being substantially planar with respect to the via material. - View Dependent Claims (45, 46, 47, 48, 49, 50)
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Specification