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Strengthening the interface between dielectric layers and barrier layers with an oxide layer of varying composition profile

  • US 20060252273A1
  • Filed: 05/04/2005
  • Published: 11/09/2006
  • Est. Priority Date: 05/04/2005
  • Status: Active Grant
First Claim
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1. A method of depositing a dielectric layer, comprising:

  • introducing a processing gas comprising an organosilicon compound and an oxidizing gas into a chamber at a first organosilicon compound to oxidizing gas flow rate ratio of at least about 1;

    40;

    turning on RF power in the chamber;

    depositing a transition layer on a substrate in the chamber while ramping up the flow rate of the organosilicon compound into the chamber to provide a second organosilicon compound to oxidizing gas flow rate ratio; and

    depositing a dielectric layer comprising silicon, oxygen, and carbon on the transition layer for a period of time while maintaining the second organosilicon compound to oxidizing gas flow rate ratio.

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