Strengthening the interface between dielectric layers and barrier layers with an oxide layer of varying composition profile
First Claim
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1. A method of depositing a dielectric layer, comprising:
- introducing a processing gas comprising an organosilicon compound and an oxidizing gas into a chamber at a first organosilicon compound to oxidizing gas flow rate ratio of at least about 1;
40;
turning on RF power in the chamber;
depositing a transition layer on a substrate in the chamber while ramping up the flow rate of the organosilicon compound into the chamber to provide a second organosilicon compound to oxidizing gas flow rate ratio; and
depositing a dielectric layer comprising silicon, oxygen, and carbon on the transition layer for a period of time while maintaining the second organosilicon compound to oxidizing gas flow rate ratio.
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Abstract
A method of processing a substrate including depositing a transition layer and a dielectric layer on a substrate in a processing chamber are provided. The transition layer is deposited from a processing gas including an organosilicon compound and an oxidizing gas. The flow rate of the organosilicon compound is ramped up during the deposition of the transition layer such that the transition layer has a carbon concentration gradient and an oxygen concentration gradient. The transition layer improves the adhesion of the dielectric layer to an underlying barrier layer on the substrate.
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Citations
20 Claims
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1. A method of depositing a dielectric layer, comprising:
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introducing a processing gas comprising an organosilicon compound and an oxidizing gas into a chamber at a first organosilicon compound to oxidizing gas flow rate ratio of at least about 1;
40;
turning on RF power in the chamber;
depositing a transition layer on a substrate in the chamber while ramping up the flow rate of the organosilicon compound into the chamber to provide a second organosilicon compound to oxidizing gas flow rate ratio; and
depositing a dielectric layer comprising silicon, oxygen, and carbon on the transition layer for a period of time while maintaining the second organosilicon compound to oxidizing gas flow rate ratio. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of depositing a dielectric layer, comprising:
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introducing a processing gas comprising an organosilicon compound and an oxidizing gas into a chamber at a first organosilicon compound to oxidizing gas flow rate ratio of at least about 1;
40;
turning on RF power in the chamber;
depositing a transition layer on a substrate in the chamber while ramping up the flow rate of the organosilicon compound into the chamber at a ramp rate between about 200 mg/min/sec and about 3000 mg/min/sec to provide a second organosilicon compound to oxidizing gas flow rate ratio; and
depositing a dielectric layer comprising silicon, oxygen, and carbon on the transition layer for a period of time while maintaining the second organosilicon compound to oxidizing gas flow rate ratio. - View Dependent Claims (13, 14, 15)
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16. A method of depositing a dielectric layer, comprising:
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depositing a barrier layer comprising silicon and carbon on a substrate;
introducing a processing gas comprising an organosilicon compound and an oxidizing gas into a chamber at a first organosilicon compound to oxidizing gas flow rate ratio of at least about 1;
40;
turning on RF power in the chamber;
depositing a transition layer on the substrate in the chamber to a thickness between about 80 Å and
about 500 Å
while ramping up the flow rate of the organosilicon compound into the chamber to provide a second organosilicon compound to oxidizing gas flow rate ratio; and
depositing a dielectric layer comprising silicon, oxygen, and carbon on the transition layer for a period of time while maintaining the second organosilicon compound to oxidizing gas flow rate ratio. - View Dependent Claims (17, 18, 19, 20)
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Specification