Semiconductor device and manufacturing method of the same

• US 20060255345A1
• Filed: 04/25/2006
• Published: 11/16/2006
• Est. Priority Date: 05/13/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Sakakura, Masayuki
• Granted Patent: US 8,253,179 B2
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: G02F 1/133302 Rigid substrates, e.g. inorganic substrates
• CPC Class Codes: G02F 1/1339 Gaskets; Spacers; Sealing of cells
• CPC Class Codes: G02F 1/134336 Matrix
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/13629 Multilayer wirings
• CPC Class Codes: G02F 1/136295 Materials; Compositions; Manufacture processes
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/123 pixel
• CPC Class Codes: G09G 2300/0426 Layout of electrodes and connections
• CPC Class Codes: G09G 2310/0235 Field-sequential colour display
• CPC Class Codes: G09G 3/2007 Display of intermediate tones
• CPC Class Codes: G09G 3/36 using liquid crystals
• CPC Class Codes: H01L 27/0255 using diodes as protective elements
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1244 for preventing breakage, peeling or short circuiting
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 27/1274 using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
• CPC Class Codes: H01L 29/78663 Amorphous silicon transistors
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate
• CPC Class Codes: H01L 2924/13069 : Thin film transistor [TFT]
• CPC Class Codes: H10K 59/1201 : Manufacture or treatment
• CPC Class Codes: H10K 59/1213 : the pixel elements being TFTs
• CPC Class Codes: H10K 59/131 : Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/88 : Dummy elements, i.e. elements having non-functional features

Abstract

An insulating film provided between adjacent pixels is referred to as a bank, a partition, a barrier, an embankment or the like, and is provided above a source wiring or a drain wiring for a thin film transistor, or a power supply line. In particular, at an intersection portion of these wirings provided in different layers, a larger step is formed there than in other portions. Even in a case that the insulating film provided between adjacent pixels is formed by a coating method, there is a problem that thin portions are partially formed due to this step and the withstand pressure is reduced. In the present invention, a dummy material is arranged near the large step portion, particularly, around the intersection portion of wirings, so as to alleviate unevenness formed thereover. The upper wring and the lower wiring are arranged in a misaligned manner so as not to align the end portions.

Claims

1. A semiconductor device comprising:

a first wiring, a second wiring and a conductive layer over an insulating surface;

a first insulating layer covering the first wiring, the second wiring and the conductive layer;

an electrode over the first insulating layer, wherein the electrode is in contact with the second wiring; and

a second insulating layer covering the electrode, the first insulating layer, the first wiring, the second wiring and the conductive layer,

wherein the first wiring, the second wiring and the conductive layer contain a same material, and

wherein the electrode is provided between the conductive layer and the first wiring.

2. A semiconductor device according to claim 1, wherein the second insulating film has an opening, and the conductive layer is provided between a vicinity of the opening and the electrode.

6. A semiconductor device according to any one of claims 1 and 3, further comprising a thin film transistor including the first wiring as a gate electrode.

7. A semiconductor device according to any one of claims 1 and 3, further comprising a first thin film transistor including the first wiring as a gate electrode, and a second thin film transistor including the second wiring as a gate electrode.

8. A semiconductor device according to any one of claims 1 and 3, wherein the conductive layer is in an electrically floating state.

15. A semiconductor device according to any one of claims 1, 3 and 9, wherein the conductive layer has an L-like shape.

16. A semiconductor device according to any one of claims 1, 3 and 9, wherein the second insulating layer includes a solvent, and is formed using a material whose viscosity is from 10 cp to 60 cp by a coating method.

17. A semiconductor device according to any one of claims 1, 3 and 9, wherein the semiconductor device is at least one selected from the group consisting of a portable information terminal, a video camera, a digital camera, a laptop computer, an image reproducing device, and a cellular phone.

3. A semiconductor device comprising:

a first wiring, a second wiring and a conductive layer over an insulating surface;

a first insulating layer covering the first wiring, the second wiring and the conductive layer;

a first electrode over the first insulating layer, wherein the first electrode is in contact with the second wiring;

a second insulating layer covering the first electrode, the first insulating layer, the first wiring, the second wiring and the conductive layer; and

a light emitting element containing a second electrode over the first insulating layer, a light-emitting layer over the second electrode, and a third electrode over the light-emitting layer.

4. A semiconductor device according to claim 3, wherein a vicinity of the second electrode is covered by the second insulating layer.

5. A semiconductor device according to claim 3, wherein the second insulating film has an opening, and the conductive layer is provided between a vicinity of the opening and the first electrode.

14. A semiconductor device according to any one of claims 3 and 9, wherein the light-emitting layer contains at least one of an organic compound and an inorganic compound.

9. A semiconductor device comprising:

a first wiring and a second wiring over an insulating surface;

a first insulating layer covering the first wiring and the second wiring;

a first electrode, a second electrode and a conductive layer over the first insulating layer, wherein the conductive layer is in an electrically floating state;

a second insulating layer covering the first insulating layer, the first electrode, the conductive layer, the first wiring and the second wiring;

a light-emitting layer over the second electrode;

a third electrode over the light-emitting layer,

wherein the second wiring has a same material as the first wiring, and the conductive layer has a same material as the first electrode, and

wherein the first electrode is provided between the conductive layer and the first wiring.

10. A semiconductor device according to claim 9, wherein the second electrode, the light-emitting layer and the third electrode form a light-emitting element.

11. A semiconductor device according to claim 9, wherein the second insulating layer is a partition covering a vicinity portion of the second electrode.

12. A semiconductor device according to claim 9, wherein the second insulating film has an opening, and the conductive layer is provided between a vicinity of the opening and the first electrode.

13. A semiconductor device according to claim 9, further comprising a first thin film transistor including the first wiring as a gate electrode, and a second thin film transistor including the second wiring as a gate electrode.