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Semiconductor device having multiple lateral channels and method of forming the same

  • US 20060255360A1
  • Filed: 05/13/2005
  • Published: 11/16/2006
  • Est. Priority Date: 05/13/2005
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof;

    a first lateral channel above said conductive substrate;

    a second lateral channel above said first lateral channel;

    a second contact above said second lateral channel; and

    an interconnect that connects said first and second lateral channels to said conductive substrate operable to provide a low resistance coupling between said first contact and said first and second lateral channels.

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