Method of manufacturing semiconductor device and semiconductor device

• US 20060255370A1
• Filed: 04/17/2006
• Published: 11/16/2006
• Est. Priority Date: 12/19/2000
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koezuka, Junichi, Nakamura, Osamu, Yamazaki, Shunpei, Kajiwara, Masayuki
• Granted Patent: US 7,821,005 B2
• Time in Patent Office: Days
• US Class Current: 257/223
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: Y10S 257/913 with means to absorb or localize unwanted impurities or defects from semiconductors, e.g. heavy metal gettering

Abstract

Phosphorus is implanted into a crystalline semiconductor film by an ion dope method. However, a concentration of phosphorus required for gettering is 1×10²⁰/cm³ or higher which hinders recrystallization by later anneal, and thus this becomes a problem. Also, when phosphorus is added at a high concentration, processing time required for doping is increased and throughput in a doping step is reduced, and thus this becomes a problem. The present invention is characterized in that impurity regions to which an element belonging to the group 18 of the periodic table is added are formed in a semiconductor film having a crystalline structure and gettering for segregating in the impurity regions a metal element contained in the semiconductor film is performed by heat treatment. Also, a one conductivity type impurity may be contained in the impurity regions.

Claims

1. A semiconductor device comprising:

a crystalline semiconductor film;

a gate insulating film adjacent to the crystalline semiconductor film; and

a gate electrode adjacent to the gate insulating film,

wherein the crystalline semiconductor film comprises a channel forming region and an impurity region adjacent to the channel forming region,

wherein the impurity region is added with a one conductivity type impurity element and a noble gas element.

2. A semiconductor device according to claim 1, wherein the noble gas element is at least one selected from the group consisting of helium, neon, argon, krypton, and xenon.

3. A semiconductor device comprising:

a crystalline semiconductor film;

a gate insulating film adjacent to the crystalline semiconductor film; and

a gate electrode adjacent to the gate insulating film,

wherein the crystalline semiconductor film comprises a channel forming region, a first impurity region added a one conductivity type impurity element adjacent to the channel forming region, and a second impurity region added the one conductivity type impurity element and a noble gas element.

4. A semiconductor device according to claim 3, wherein the noble gas element is at least one selected from the group consisting of helium, neon, argon, krypton, and xenon.

5. A semiconductor device comprising:

a crystalline semiconductor film added a metal element to a semiconductor film having an amorphous;

a gate insulating film adjacent to the crystalline semiconductor film; and

a gate electrode adjacent to the gate insulating film,

wherein the crystalline semiconductor film comprises a channel forming region and an impurity region added a one conductivity type impurity element adjacent to the channel forming region,

wherein the impurity region comprises a noble gas element and the metal element at a higher concentration than the channel forming region.

6. A semiconductor device according to claim 5, wherein the metal element is at least one selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

7. A semiconductor device according to claim 5, wherein the noble gas element is at least one selected from the group consisting of helium, neon, argon, krypton, and xenon.

8. A semiconductor device comprising:

a crystalline semiconductor film added a metal element to a semiconductor film having an amorphous;

a gate insulating film adjacent to the crystalline semiconductor film; and

a gate electrode adjacent to the gate insulating film,

wherein the crystalline semiconductor film comprises a channel forming region, a first impurity region added a one conductivity type impurity element adjacent to the channel forming region, and a second impurity region added the one conductivity type impurity element and a noble gas element, and

wherein the second impurity region comprises the metal element at a higher concentration than the channel forming region.

9. A semiconductor device according to claim 8, wherein the metal element is at least one selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

10. A semiconductor device according to claim 8, wherein the noble gas element is at least one selected from the group consisting of helium, neon, argon, krypton, and xenon.