Method of manufacturing semiconductor device and semiconductor device
First Claim
1. A semiconductor device comprising:
- a crystalline semiconductor film;
a gate insulating film adjacent to the crystalline semiconductor film; and
a gate electrode adjacent to the gate insulating film, wherein the crystalline semiconductor film comprises a channel forming region and an impurity region adjacent to the channel forming region, wherein the impurity region is added with a one conductivity type impurity element and a noble gas element.
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Abstract
Phosphorus is implanted into a crystalline semiconductor film by an ion dope method. However, a concentration of phosphorus required for gettering is 1×1020/cm3 or higher which hinders recrystallization by later anneal, and thus this becomes a problem. Also, when phosphorus is added at a high concentration, processing time required for doping is increased and throughput in a doping step is reduced, and thus this becomes a problem. The present invention is characterized in that impurity regions to which an element belonging to the group 18 of the periodic table is added are formed in a semiconductor film having a crystalline structure and gettering for segregating in the impurity regions a metal element contained in the semiconductor film is performed by heat treatment. Also, a one conductivity type impurity may be contained in the impurity regions.
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Citations
10 Claims
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1. A semiconductor device comprising:
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a crystalline semiconductor film;
a gate insulating film adjacent to the crystalline semiconductor film; and
a gate electrode adjacent to the gate insulating film, wherein the crystalline semiconductor film comprises a channel forming region and an impurity region adjacent to the channel forming region, wherein the impurity region is added with a one conductivity type impurity element and a noble gas element. - View Dependent Claims (2)
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3. A semiconductor device comprising:
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a crystalline semiconductor film;
a gate insulating film adjacent to the crystalline semiconductor film; and
a gate electrode adjacent to the gate insulating film, wherein the crystalline semiconductor film comprises a channel forming region, a first impurity region added a one conductivity type impurity element adjacent to the channel forming region, and a second impurity region added the one conductivity type impurity element and a noble gas element. - View Dependent Claims (4)
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5. A semiconductor device comprising:
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a crystalline semiconductor film added a metal element to a semiconductor film having an amorphous;
a gate insulating film adjacent to the crystalline semiconductor film; and
a gate electrode adjacent to the gate insulating film, wherein the crystalline semiconductor film comprises a channel forming region and an impurity region added a one conductivity type impurity element adjacent to the channel forming region, wherein the impurity region comprises a noble gas element and the metal element at a higher concentration than the channel forming region. - View Dependent Claims (6, 7)
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8. A semiconductor device comprising:
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a crystalline semiconductor film added a metal element to a semiconductor film having an amorphous;
a gate insulating film adjacent to the crystalline semiconductor film; and
a gate electrode adjacent to the gate insulating film, wherein the crystalline semiconductor film comprises a channel forming region, a first impurity region added a one conductivity type impurity element adjacent to the channel forming region, and a second impurity region added the one conductivity type impurity element and a noble gas element, and wherein the second impurity region comprises the metal element at a higher concentration than the channel forming region. - View Dependent Claims (9, 10)
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Specification