×

Elimination of gate oxide weak spot in deep trench

  • US 20060255402A1
  • Filed: 05/12/2005
  • Published: 11/16/2006
  • Est. Priority Date: 05/12/2005
  • Status: Active Grant
First Claim
Patent Images

1. A electronic device supported on a semiconductor substrate comprising:

  • a trench opened in said semiconductor substrate wherein said trench further includes a thick dielectric layer disposed at a bottom of said trench; and

    a composite dual dielectric layers covering a trench side wall and a trench bottom corner interfacing between said trench sidewall and said thick layer of insulation material.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×