Method for encapsulating a semiconductor device and semiconductor device

• US 20060255435A1
• Filed: 03/24/2006
• Published: 11/16/2006
• Est. Priority Date: 03/24/2005
• Status: Abandoned Application

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Woerner, Holger, Fuergut, Edward
• Application Number:
  US11/388,551
• Publication Number:
  US 20060255435A1
• Time in Patent Office: Days
• US Class Current: 257/666
• CPC Class Codes: B29C 45/02 Transfer moulding, i.e. transferring the required volume of moulding material by a plunger from a "shot" cavity into a mould cavity
• CPC Class Codes: B29C 45/14655 connected to or mounted on a carrier, e.g. lead frame
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/85 using a wire connector
• CPC Class Codes: H01L 23/16 Fillings or auxiliary members in containers or encapsulations, e.g. centering rings H01L23/42, H01L23/552 take precedence
• CPC Class Codes: H01L 23/31 characterised by the arrangement or shape
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/85 using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/207 Diameter ranges
• CPC Class Codes: H03H 9/10 Mounting in enclosures constructional combinations of enclosure with electromechanical and other electronic elements H03H9/0538

Abstract

One aspect of the invention relates to a method for encapsulating a semiconductor device which has at least one semiconductor chip arranged on a substrate. The method includes application of an elastic dam to the semiconductor chip, introduction of the semiconductor chip arranged on the substrate into a mold including a lower mold half and an upper mold half, closing of the mold so that the elastic dam is completely contacted by an inner surface of the upper mold half, and encapsulation of the semiconductor device with a molding compound.

Claims

1. A method for encapsulating a semiconductor device which comprises at least one semiconductor chip arranged on a substrate, the method comprising:

applying an elastic dam to the semiconductor chip;

introducing the semiconductor chip arranged on the substrate into a mold comprising a lower mold half and an upper mold half;

closing the mold so that the elastic dam is completely contacted by an inner surface of the upper mold half; and

encapsulating the semiconductor device with a molding compound.

2. The method of claim 1, further comprising fixing the at least one semiconductor chip on the substrate, and adhesive attachment of the at least one semiconductor chip on the substrate.

3. The method of claim 1, further comprising bonding the semiconductor chip, and die-wire bonding.

4. The method of claim 1, wherein the application of the dam is performed by dispensing, printing or using preforms.

5. The method of claim 1, further comprising curing the molding compound.

6. The method of claim 1, wherein closing the mold is performed by using pressure so that the dam is compressed by a defined amount on account of its elasticity.

7. The method of claim 1, a thermoplastic epoxy resin is used as the molding compound.

8. The method of claim 1, wherein an elastic polymer material, from the group comprising silicone and polyurethane, is used as the dam material.

9. The method of claim 1, wherein rubber is used as the dam material.

10. The method of claim 1, wherein the dam is applied to the semiconductor chip in such a way that it runs all the way around a surface area to be sealed.

11. The method of claim 10, wherein the dam, the surface area of the semiconductor chip that is to be sealed and part of the inner surface of the upper mold half of the mold form a closed cavity which is sealed with respect to molding compound when the mold is closed.

12. The method of claim 1, wherein the substrate comprises a first surface and a second surface, opposite from the first surface, the semiconductor chip being applied to the first surface of the substrate.

13. The method of claim 12, wherein the substrate rests with its second surface on an inner surface of the lower mold half of the mold.

14. The method of claim 1, the semiconductor chip comprising a first surface and a second surface, opposite from the first surface, the dam being formed on the first surface of the semiconductor chip.

15. The method of claim 14, wherein the semiconductor chip is fixed with its second surface on the first surface of the substrate.

16. The method of claim 1, wherein encapsulating the semiconductor device is carried out by means of a transfer molding method.

17. A semiconductor device comprising:

a semiconductor chip applied to a substrate and encapsulated in a package, the semiconductor chip and the substrate respectively having a first surface and a second surface;

wherein the semiconductor chip rests with its second surface on the second surface of the substrate; and

wherein the semiconductor chip comprises on its first surface a dam delimiting a surface area to be sealed.

18. The semiconductor device of claim 17, wherein it also has a leadframe, to which the semiconductor chip is bonded by means of lead wires.

19. The semiconductor device of claim 17, wherein the semiconductor chip is adhesively attached on the substrate.

20. The semiconductor device of claim 17, wherein the package is formed by means of a transfer molding method.

21. The semiconductor device of claim 17, wherein the package is produced from a thermoplastic epoxy resin.

22. The semiconductor device of claim 17, wherein the dam is produced from an elastic polymer material.

23. The semiconductor device of claim 22, wherein the dam is produced from silicone or polyurethane.

24. The semiconductor device of claim 17, wherein the dam is produced from rubber.