Bi-directional MOS current sense circuit

• US 20060255783A1
• Filed: 05/10/2005
• Published: 11/16/2006
• Est. Priority Date: 05/10/2005
• Status: Active Grant

• Current Assignee: Bel Power Solutions Inc.
• Original Assignee: Power One Ltd (ABB Limited)
• Inventors: Chapuis, Alain
• Granted Patent: US 7,327,149 B2
• Time in Patent Office: Days
• US Class Current: 323/282
• CPC Class Codes: G01R 19/0092 measuring current only all subgroups of G01R19/00 take precedence

Abstract

A current sensing circuit comprises a power device adapted to conduct a bidirectional current between first and second terminals thereof, first and second sensing devices operatively coupled to the power device, a sense amplifier providing first and second voltages to the first and second sensing devices, and a gate drive device providing activating signals to the power switching device and the first and second sensing devices. The first and second sensing devices each has an active area that is substantially identical and significantly smaller than a corresponding active area of the power switching device. The sense amplifier measures the voltage of the first sensing device and maintains the voltage on the second sensing device at the same level as the first sensing device by injecting an additional current into the second sensing device. The sense amplifier further provides an output signal proportional to the bidirectional current. The first and second sensing devices have k times higher resistance than a corresponding resistance of the power device when in an active state.

Claims

1. A current sensing circuit comprising:

a power device adapted to conduct a bidirectional current between first and second terminals thereof;

a first sensing device operatively coupled to the first terminal of the power device and a second sensing device operatively coupled to the second terminal of the power device, the first and second sensing devices each having an active area that is substantially identical and significantly smaller than a corresponding active area of the power device, the first and second sensing devices providing respective first and second voltages;

a sense amplifier operatively coupled to the first and second sensing devices, the sense amplifier measuring the first and second voltages and injecting current to the second sensing device in order to maintain the first and second voltages equal to each other, the sense amplifier further providing an output current proportional to the bidirectional current; and

a gate drive device operatively coupled to activation terminals of the power device and the first and second sensing devices, the gate drive device providing activation signals to the power device and the first and second sensing devices.

2. The current sensing circuit of claim 1, wherein the sense amplifier comprises an operational amplifier having a first input terminal coupled to the first sensing device and a second input terminal coupled to the second sensing device, a feedback transistor coupled between the first input terminal and an output of the operational amplifier, and first and second resistors coupled to the first and second input terminals, respectively.

3. The current sensing circuit of claim 2, further comprising an offset current source adapted to inject offset current into at least one of the first and second input terminals.

4. The current sensing circuit of claim 2, wherein the first and second resistors comprise first and second matched CMOS transistors.

5. The current sensing circuit of claim 1, wherein the first and second sensing devices have k times higher resistance than a corresponding resistance of the power device when in an active state.

6. The current sensing circuit of claim 2, wherein the sense amplifier comprises plural CMOS transistors.

7. The current sensing circuit of claim 1, wherein the power device further comprises a low side switch of a switched mode voltage converter.

8. The current sensing circuit of claim 1, wherein the power device further comprises a high side switch of a switched mode voltage converter.

9. The current sensing circuit of claim 1, wherein the gate drive device provides the activation signals to the power device and the first and second sensing devices simultaneously.

10. The current sensing circuit of claim 1, wherein the gate drive device provides the activation signals to the first and second sensing devices a delay period after providing the activation signal to the power device.

11. A switched mode power converter having a power switching device and a current sensing circuit adapted to sense bidirectional current through the power switching device, the current sensing circuit further comprising:

a first sensing device operatively coupled to the first terminal of the power device and a second sensing device operatively coupled to the second terminal of the power device, the first and second sensing devices each having an active area that is substantially identical and significantly smaller than a corresponding active area of the power switching device, the first and second sensing devices providing respective first and second voltages; and

a sense amplifier operatively coupled to the first and second sensing devices, the sense amplifier measuring the first and second voltages and injecting current to the second sensing device in order to maintain the first and second voltages equal to each other, the sense amplifier further providing an output current proportional to the bidirectional current.

12. The switched mode power converter of claim 11, wherein the sense amplifier comprises an operational amplifier having a first input terminal coupled to the first sensing device and a second input terminal coupled to the second sensing device, a feed back transistor coupled between the first input terminal and an output of the operational amplifier, and first and second resistors coupled to the first and second input terminals, respectively.

13. The switched mode power converter of claim 12, wherein the first and second resistors comprise first and second matched CMOS transistors.

14. The switched mode power converter of claim 11, wherein the first and second sensing devices have k times higher resistance than a corresponding resistance of the power switching device when in an active state.

15. The switched mode power converter of claim 11, wherein the sense amplifier injects current into one of the first and second sensing devices.

16. The switched mode power converter of claim 11, wherein the sense amplifier comprises plural CMOS transistors.

17. The switched mode power converter of claim 11, wherein the power switching device further comprises a low side switch of the switched mode power converter.

18. The switched mode power converter of claim 11, wherein the power switching device further comprises a high side switch of the switched mode power