LONG WAVE PASS INFRARED FILTER BASED ON POROUS SEMICONDUCTOR MATERIAL AND THE METHOD OF MANUFACTURING THE SAME

• US 20060256428A1
• Filed: 05/16/2006
• Published: 11/16/2006
• Est. Priority Date: 05/16/2005
• Status: Abandoned Application

• Current Assignee: Lake Shore Cryotronics, Inc.
• Original Assignee: Lake Shore Cryotronics, Inc.
• Inventors: McGovern, William, Sanghavi, Mahavir, Kochergin, Vladimir
• Application Number:
  US11/383,553
• Publication Number:
  US 20060256428A1
• Time in Patent Office: Days
• US Class Current: 359/350
• CPC Class Codes: G02B 5/207 comprising semiconducting materials
• CPC Class Codes: G02B 5/208 for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation

Abstract

Scattering-type long wave pass filters for the infrared region of the spectrum offer high levels of suppression of the unwanted short-wave radiation, good levels of transmission of the desired long wave radiation combined with good control of the rejection edge position and shape and good mechanical stability of the filter layer. Such filters are well suited for the wide range of applications and can be used in various environments including cryogenic temperatures. Several methods of fabrication of such filters based on electrochemical etching of semiconductor materials in order to form porous layer are provided.

Claims

1. An infrared filter comprising:

a substrate or host silicon wafer having a first surface and a second surface and further including plural holes defined at least partially therethrough, said holes having cross-sections within a selected range of sizes, said holes being spaced by distances within a selected range, wherein said host wafer is transparent over the substantial part of the infrared spectral range;

wherein light with wavelengths smaller than the characteristic size of the hole structure is effectively scattered thus forming a rejection spectral band while the light with wavelengths above said characteristic size of the pore structure is effectively transmitted through the filter thus forming a pass spectral band.

2. An infrared filter of claim 1 wherein said holes are formed on the first surface of the silicon wafer while the second surface of the silicon wafer remains flat.

3. An infrared filter of claim 1 wherein said holes are formed on both first and second surfaces of the silicon wafer.

4. An infrared filter of claim 3 wherein said holes on different surfaces of the silicon wafer have different structures thus scattering light differently.

5. An infrared filter of claim 1 wherein said holes are formed on the first surface of the silicon wafer, the second surface of the silicon wafer being covered with an antireflection structure to improve the transmission through the filter at a selected spectral band within the pass spectral band of the filter.

6. An infrared filter of claim 1 wherein at least one surface of the silicon wafer containing said holes is coated with a layer of transparent dielectric material to minimize the reflection losses at said surface of the filter.

7. An infrared filter of claim 1 wherein said holes are straight pores extending in a direction perpendicular to the surface of the silicon wafer.

8. An infrared filter of claim 7 wherein said silicon wafer is (100)-oriented silicon wafer and the holes are formed by electrochemical etching of said silicon wafer in HF-containing acidic electrolyte.

9. An infrared filter of claim 8 wherein said holes are nucleated randomly during the electrochemical etching process.

10. An infrared filter of claim 8 wherein hole etching starting points in a form of etch-pits are formed on the surface of the silicon wafer prior to the electrochemical etching by means of photolithography technique.

11. An infrared filter of claim 1 wherein said holes are pores with modulated diameters extending in a direction perpendicular to the surface of the silicon wafer.

12. An infrared filter of claim 11 wherein said silicon wafer is (100)-oriented silicon wafer, the pores are formed by electrochemical etching of said silicon wafer in HF-containing acidic electrolyte and the modulation of the pore diameter is accomplished by the modulation of the electrochemical etching parameter during the electrochemical etching process.

13. An infrared filter of claim 12 wherein said electrochemical etching parameter is selected from the group consisted of the applied current density, applied voltage and/or illumination intensity.

14. An infrared filter of claim 11 wherein said holes are nucleated randomly during the electrochemical etching process.

15. An infrared filter of claim 11 wherein hole etching starting points in a form of etch-pits are formed on the surface of the silicon wafer prior to the electrochemical etching by means of photolithography technique.

16. An infrared filter of claim 1 wherein said holes extend in a two or more directions at some angles with respect to the normal to the surface of the silicon wafer.

17. An infrared filter of claim 16 wherein said silicon wafer is (111)-oriented silicon wafer and the holes are formed by electrochemical etching of said silicon wafer in HF-containing acidic electrolyte.

18. An infrared filter of claim 17 wherein said holes are nucleated randomly during the electrochemical etching process.

19. An infrared filter of claim 1 wherein said holes are of two different types:

main holes which are straight and extend in a direction perpendicular to the surface of the silicon wafer and secondary holes originating at the walls of the main holes and propagating at directions extended nearly parallel to the silicon wafer surface.

20. An infrared filter of claim 19 wherein said silicon wafer is (100)-oriented n-type doped silicon wafer and the holes are formed by electrochemical etching of said silicon wafer in HF-containing aqueous acidic electrolyte.

21. An infrared filter of claim 19 wherein said holes are nucleated randomly during the electrochemical etching process.

22. An infrared filter of claim 19 wherein hole etching starting points in a form of etch-pits are formed on the surface of the silicon wafer prior to the electrochemical etching by means of photolithography technique.

23. An infrared filter of claim 1 wherein said filter is a long wave pass filter used for scattering the short wavelength radiation and transmitting the long wave radiation light.

24. An infrared filter of claim 23 wherein said long wave pass filter is used in an optical system to increase the signal-to-noise ratio of the detector.