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Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage element

  • US 20060256611A1
  • Filed: 08/31/2005
  • Published: 11/16/2006
  • Est. Priority Date: 05/13/2005
  • Status: Active Grant
First Claim
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1. A nonvolatile memory cell for use in a memory circuit, the memory cell comprising:

  • a bipolar programmable storage element operative to store a logic state of the memory cell, a first terminal of the bipolar programmable storage element being adapted for connection to a first bit line in the memory circuit; and

    a metal-oxide-semiconductor device including first and second source/drains and a gate, the first source/drain being connected to a second terminal of the bipolar programmable storage element, the second source/drain being adapted for connection to a second bit line in the memory circuit, and the gate being adapted for connection to a word line in the memory circuit.

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