Atomic layer deposition of high-k metal oxides

• US 20060258078A1
• Filed: 08/18/2003
• Published: 11/16/2006
• Est. Priority Date: 08/18/2002
• Status: Abandoned Application

• Current Assignee: Avid Technology Incorporated, Integrated Process Systems Ltd.
• Original Assignee: Avid Technology Incorporated, Integrated Process Systems Ltd.
• Inventors: Lee, Sang-In, Senzaki, Yoshihide, Lee, Sang-Kyoo
• Application Number:
  US10/524,814
• Publication Number:
  US 20060258078A1
• Time in Patent Office: Days
• US Class Current: 438/216
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/45531 specially adapted for making ternary or higher compositions
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: H01L 21/02181 the material containing hafnium, e.g. HfO2
• CPC Class Codes: H01L 21/02186 the material containing titanium, e.g. TiO2
• CPC Class Codes: H01L 21/02189 the material containing zirconium, e.g. ZrO2
• CPC Class Codes: H01L 21/02205 the layer being characterised by the precursor material for deposition
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/28194 by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition H01L21/28202 takes precedence
• CPC Class Codes: H01L 21/3141 Deposition using atomic layer deposition techniques [ALD]
• CPC Class Codes: H01L 21/31604 Deposition from a gas or vapour H01L21/31691, H01L21/31695 take precedence
• CPC Class Codes: H01L 21/31641 Deposition of Zirconium oxides, e.g. ZrO2
• CPC Class Codes: H01L 21/31645 Deposition of Hafnium oxides, e.g. HfO2
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence

Abstract

The present invention relates to the atomic layer deposition (“ALD”) of high k dielectric layers of metal oxides containing Group 4 metals, including hafnium oxide, zirconium oxide, and titanium oxide. More particularly, the present invention relates to the ALD formation of Group 4 metal oxide films using an metal alkyl amide as a metal organic precursor and ozone as a co-reactant.

Claims

1. A method of growing a metal oxide film on a substrate by atomic layer deposition comprising:

(i) introducing separate pulses of metal alkyl amide and ozone into a reaction chamber containing a substrate, wherein said metal is a Group 4 metal Hf, Zr, Ti; and

(ii) repeating step (i) until a film of a target thickness is achieved.

2. The method of claim 1, wherein the metal oxide is hafnium oxide.

3. The method of claim 1, wherein the metal alkyl amide has the formula M(NR¹R²)₄, wherein M represents a Group 4 metal, R¹ is an ethyl unit, and R² is a methyl unit.

4. The method of claim 1 wherein the substrate is silicon.

5. A method of forming a gate insulator for a transistor comprising:

(i) growing a metal oxide mono layer on a substrate by atomic layer deposition by introducing separate pulses of a metal alkyl amide and ozone into a reaction chamber containing a substrate, wherein said metal is a Group 4 metal;

(ii) repeating step (i) until a dielectric film of a target thickness is achieved; and

(iii) positioning a conductive layer over the dielectric layer.

6. The method of claim 5, wherein the metal oxides are hafnium oxide, zirconium oxide and titanium oxide.

7. The method of claim 5, wherein the metal alkyl amide has the formula M(NR¹R²)₄, wherein M represents a Group 4 metal, R¹ is an ethyl unit, and R² is a methyl unit.

8. The method of claim 5 wherein the substrate is silicon.

9. A method of forming a capacitor comprising:

(i) forming a metal oxide mono layer by atomic layer deposition by introducing separate pulses of a metal alkyl amide precursor and ozone into a reaction chamber containing a substrate, wherein said metal is a Group 4 metal;

(ii) repeating step (i) until a film of a target thickness is achieved; and

(iii) positioning said film between two electrodes.

10. The method of claim 9, wherein the metal oxides are hafnium oxide, ZrO₂, and TiO₂.

11. The method of claim 9, wherein the metal alkyl amide has the formula M(NR¹R²)₄, wherein M represents a Group 4 metal, R¹ is an ethyl unit, and R² is a methyl unit.

12. The method of claim 9, wherein the substrate is one of the two electrodes.