Method of forming a trench structure having one or more diodes embedded therein adjacent a PN junction
First Claim
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1. A method of forming a semiconductor structure, comprising:
- forming a semiconductor region comprising a P-type region and a N-type region forming a PN junction therebetween;
forming a first trench extending in the semiconductor region adjacent at least one of the P-type and N-type regions; and
forming at least one diode in the first trench.
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Abstract
A semiconductor structure is formed as follows. A semiconductor region is formed to have a P-type region and a N-type region forming a PN junction therebetween. A first trench is formed extending in the semiconductor region adjacent at least one of the P-type and N-type regions is formed. At least one diode is formed in the trench.
109 Citations
26 Claims
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1. A method of forming a semiconductor structure, comprising:
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forming a semiconductor region comprising a P-type region and a N-type region forming a PN junction therebetween;
forming a first trench extending in the semiconductor region adjacent at least one of the P-type and N-type regions; and
forming at least one diode in the first trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A method of forming a semiconductor structure, comprising:
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forming an epitaxial layer over and in contact with a substrate, the epitaxial layer being of the same conductivity type as the substrate;
forming a body region in the epitaxial layer so that after forming the body region the epitaxial layer comprises a P-type region and an N-type region forming a PN junction therebetween, the body region being one of the P-type and N-type regions, and a drift region being the other one of the P-type and N-type regions, the drift region being of the same conductivity type as the substrate;
forming a plurality of laterally spaced trenches each extending through at least a portion of the drift region; and
forming a plurality of diodes in each of the plurality of trenches. - View Dependent Claims (23, 24, 25, 26)
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Specification