MOS field plate trench transistor device
First Claim
1. A MOS field plate trench transistor device having a trench structure extending in a first direction in a semiconductor region comprising:
- a source region and a drain region formed in the semiconductor region with a first conductivity type and, between the source region and the drain region, a body region is formed with a second conductivity type, which is opposite to the first conductivity type;
a gate electrode device formed in between in the interior of the trench structure in a manner insulated by an insulation region; and
a mesa region is located in the semiconductor region as intermediate region in a direction running perpendicular to the first direction and with respect to an adjacent MOS transistor device has a width DMesa, the value of which corresponds to the value of the width DTrench of the trench structure (30) in this direction or exceeds said value and does not go beyond 1.5 times said value, so that the following holds true;
DTrench≦
DMesa≦
1.5·
DTrench. where DMesa is the average value of the width of the mesa region at the level of the pn junction between the body region and the drain region and the width of the mesa region at 80% of the depth of the trench structure and in which the mesa region is provided with a contact hole to the body region.
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Accused Products
Abstract
A MOS field plate trench transistor device is disclosed. In one embodiment, in order to obtain a lowest possible on resistance, in the case of a MOS field plate trench transistor device having a body contact hole, it is proposed to form the avalanche breakdown region preferably in an end region of a provided trench structure by virtue of the fact that a mesa region with the body contact region in the semiconductor region as intermediate region in a direction running perpendicular to the first direction and with respect to an adjacent MOS transistor device has a width DMesa, the value of which corresponds to the value of the width DTrench of the trench structure in this direction or exceeds said value and does not go beyond 1.5 times said value, so that the following holds true: DTrench≦DMesa≦1.5·DTrench. As an alternative, the width DMesa is chosen such that the body contact hole precisely still has space, but the breakdown region is in any event shifted into the end region.
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Citations
23 Claims
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1. A MOS field plate trench transistor device having a trench structure extending in a first direction in a semiconductor region comprising:
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a source region and a drain region formed in the semiconductor region with a first conductivity type and, between the source region and the drain region, a body region is formed with a second conductivity type, which is opposite to the first conductivity type;
a gate electrode device formed in between in the interior of the trench structure in a manner insulated by an insulation region; and
a mesa region is located in the semiconductor region as intermediate region in a direction running perpendicular to the first direction and with respect to an adjacent MOS transistor device has a width DMesa, the value of which corresponds to the value of the width DTrench of the trench structure (30) in this direction or exceeds said value and does not go beyond 1.5 times said value, so that the following holds true;
DTrench≦
DMesa≦
1.5·
DTrench.where DMesa is the average value of the width of the mesa region at the level of the pn junction between the body region and the drain region and the width of the mesa region at 80% of the depth of the trench structure and in which the mesa region is provided with a contact hole to the body region. - View Dependent Claims (2, 3, 4, 5)
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6. A MOS field plate trench transistor device having a trench structure extending in a first direction in a semiconductor region, comprising:
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a source region and a drain region formed in the semiconductor region with a first conductivity type and, between the source region and the drain region, a body region is formed with a second conductivity type, which is opposite to the first conductivity type;
a gate electrode device is formed in between in the interior of the trench structure in a manner insulated by an insulation region;
a mesa region having a width DMesa in the semiconductor region as intermediate region in a direction running perpendicular to the first direction and with respect to an adjacent MOS transistor device has a width DMesa; and
wherein the mesa region is provided with a contact hole to the body region, wherein the width DMesa is chosen such that, it is reduced to such a great extent that an avalanche breakdown occurs in the bottom region of the trench structure, and that it is reduced only to an extent such that the contact hole still has space. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A MOS field plate trench transistor device having a trench structure extending in a first direction in a semiconductor region comprising:
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a source region and a drain region formed in the semiconductor region with a first conductivity type and, between the source region and the drain region, a body region is formed with a second conductivity type, which is opposite to the first conductivity type;
a gate electrode device formed in between in the interior of the trench structure in a manner insulated by an insulation region; and
means for providing a mesa region is located in the semiconductor region as intermediate region in a direction running perpendicular to the first direction and with respect to an adjacent MOS transistor device has a width DMesa, the value of which corresponds to the value of the width DTrench of the trench structure (30) in this direction or exceeds said value and does not go beyond 1.5 times said value, so that the following holds true;
DTrench≦
DMesa≦
1.5·
DTrench.where DMesa is the average value of the width of the mesa region means at the level of the pn junction between the body region and the drain region and the width of the mesa region at 80% of the depth of the trench structure and in which the mesa region is provided with a contact hole to the body region.
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Specification