Plasma processing apparatuses and methods
First Claim
1. A plasma processing apparatus comprising:
- a processing chamber having a substrate support located therein; and
at least two separate devices selected from the following three devices;
a) a plasma generation chamber separated from the substrate support by an ion filter;
b) a remote plasma generator operationally associated with the substrate support; and
c) an electron source operationally associated with the substrate support.
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Abstract
A plasma processing apparatus and method includes a processing chamber having a substrate support and at least two separate and independently controlled devices selected from the following three devices: a first plasma generator, a second plasma generator, and an electron source. The first plasma generator directs plasma-generated cations toward the substrate support. The second plasma generator directs plasma-generated reactive neutral species toward the substrate support. The electron source directs electrons toward the substrate support. The first chamber may be separated from the substrate by an ion filter and the method may include directing predominately cations, rather than electrons, through the filter to the substrate. Along with the step of generating a remote plasma, the method may also includes directing predominately reactive neutral species, rather than ions and electrons, to the substrate. The apparatus or method may reduce structural charging on the substrate.
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Citations
33 Claims
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1. A plasma processing apparatus comprising:
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a processing chamber having a substrate support located therein; and
at least two separate devices selected from the following three devices;
a) a plasma generation chamber separated from the substrate support by an ion filter;
b) a remote plasma generator operationally associated with the substrate support; and
c) an electron source operationally associated with the substrate support. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A plasma processing apparatus comprising:
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a processing chamber having a substrate support located therein; and
at least two separate and independently controlled devices selected from the following three devices;
a) a first plasma generator that directs plasma-generated cations toward the substrate support;
b) a second plasma generator that directs plasma-generated reactive neutral species toward the substrate support; and
c) an electron source that directs electrons toward the substrate support. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25)
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26. A plasma processing apparatus comprising:
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a processing chamber having a temperature controlled susceptor located therein that is configured to receive a bulk semiconductor wafer; and
the following three separate and independently controlled devices;
a) a plasma generation chamber separated from the susceptor by a biased grid configured, depending upon the bias, to repel cations from or accelerate cations through openings in the grid to the susceptor, the processing chamber including shielding sufficient to segregate plasma of the plasma generation chamber from the susceptor;
b) a remote plasma generator configured to direct reactive neutral species, but no ions and electrons, to the susceptor; and
c) an electron flood gun configured to direct electrons to the susceptor. - View Dependent Claims (27, 28, 29, 30, 31, 32)
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33-87. -87. (canceled)
Specification