Plasma processing apparatuses and methods

• US 20060260750A1
• Filed: 07/24/2006
• Published: 11/23/2006
• Est. Priority Date: 08/30/2004
• Status: Abandoned Application

• Current Assignee: Neal R. Rueger
• Original Assignee: Neal R. Rueger
• Inventors: Rueger, Neal R.
• Application Number:
  US11/492,500
• Publication Number:
  US 20060260750A1
• Time in Patent Office: Days
• US Class Current: 156/345.380
• CPC Class Codes: C23C 16/045 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/45542 Plasma being used non-continuously during the ALD reactions
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/487 using electron radiation
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/32422 Arrangement for selecting ions or species in the plasma
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/3141 Deposition using atomic layer deposition techniques [ALD]
• CPC Class Codes: H01L 21/31608 Deposition of SiO2 H01L21/31625, H01L21/31629 and H01L21/31633 take precedence

Abstract

A plasma processing apparatus and method includes a processing chamber having a substrate support and at least two separate and independently controlled devices selected from the following three devices: a first plasma generator, a second plasma generator, and an electron source. The first plasma generator directs plasma-generated cations toward the substrate support. The second plasma generator directs plasma-generated reactive neutral species toward the substrate support. The electron source directs electrons toward the substrate support. The first chamber may be separated from the substrate by an ion filter and the method may include directing predominately cations, rather than electrons, through the filter to the substrate. Along with the step of generating a remote plasma, the method may also includes directing predominately reactive neutral species, rather than ions and electrons, to the substrate. The apparatus or method may reduce structural charging on the substrate.

Claims

1. A plasma processing apparatus comprising:

a processing chamber having a substrate support located therein; and

at least two separate devices selected from the following three devices;

a) a plasma generation chamber separated from the substrate support by an ion filter;

b) a remote plasma generator operationally associated with the substrate support; and

c) an electron source operationally associated with the substrate support.

2. The apparatus of claim 1 wherein the substrate support comprises a temperature controlled susceptor.

3. The apparatus of claim 1 wherein the substrate support is configured to receive a bulk semiconductor wafer.

4. The apparatus of claim 1 wherein the at least two separate devices are independently controlled.

5. The apparatus of claim 1 wherein the plasma generation chamber is configured to direct cations toward the substrate support.

6. The apparatus of claim 1 wherein the plasma generation chamber comprises an ICP generator.

7. The apparatus of claim 1 wherein the plasma generation chamber comprises an RF applicator and the processing chamber comprises RF shielding sufficient to segregate plasma from the substrate support.

8. The apparatus of claim 1 wherein the ion filter comprises a biased grid configured, depending upon the bias, to repel cations from or accelerate cations through openings in the grid.

9. The apparatus of claim 8 wherein the grid comprises a conductive mesh and the openings average from about 100 to about 1000 μ

m in diameter.

10. The apparatus of claim 1 wherein the remote plasma generator is configured to direct predominately reactive neutral species, rather than ions and electrons, toward the substrate support.

11. The apparatus of claim 1 wherein the remote plasma generator is configured to direct no ions and electrons toward the substrate support.

12. The apparatus of claim 1 wherein the remote plasma generator comprises a microwave applicator.

13. The apparatus of claim 1 wherein the electron source is configured to direct electrons toward the substrate support.

14. The apparatus of claim 1 wherein the electron source comprises an electron flood gun.

15. The apparatus of claim 1 wherein the plasma processing apparatus is comprised by a deposition system.

16. The apparatus of claim 1 wherein the plasma processing apparatus is comprised by an etch system.

17. A plasma processing apparatus comprising:

a processing chamber having a substrate support located therein; and

at least two separate and independently controlled devices selected from the following three devices;

a) a first plasma generator that directs plasma-generated cations toward the substrate support;

b) a second plasma generator that directs plasma-generated reactive neutral species toward the substrate support; and

c) an electron source that directs electrons toward the substrate support.

18. The apparatus of claim 17 wherein the substrate support is configured to receive a bulk semiconductor wafer.

19. The apparatus of claim 17 comprising the first generator and further comprising a means for segregating plasma of the first generator from the substrate support.

20. The apparatus of claim 19 wherein the first generator comprises an RF applicator and the means for segregating comprises RF shielding.

21. The apparatus of claim 17 wherein the first generator comprises a plasma generation chamber separated from the substrate support by an ion filter.

22. The apparatus of claim 21 wherein the ion filter comprises a biased grid configured, depending upon the bias, to repel cations from or accelerate cations through openings in the grid.

23. The apparatus of claim 17 wherein the second generator comprises a remote plasma generator.

24. The apparatus of claim 17 wherein the second generator is configured to direct no ions and electrons toward the substrate support.

25. The apparatus of claim 17 wherein the electron source comprises an electron flood gun.

26. A plasma processing apparatus comprising:

a processing chamber having a temperature controlled susceptor located therein that is configured to receive a bulk semiconductor wafer; and

the following three separate and independently controlled devices;

a) a plasma generation chamber separated from the susceptor by a biased grid configured, depending upon the bias, to repel cations from or accelerate cations through openings in the grid to the susceptor, the processing chamber including shielding sufficient to segregate plasma of the plasma generation chamber from the susceptor;

b) a remote plasma generator configured to direct reactive neutral species, but no ions and electrons, to the susceptor; and

c) an electron flood gun configured to direct electrons to the susceptor.

27. The apparatus of claim 26 wherein the plasma generation chamber comprises an ICP generator.

28. The apparatus of claim 26 wherein the plasma generation chamber comprises an RF applicator and the shielding comprises RF shielding.

29. The apparatus of claim 26 wherein the grid comprises a conductive mesh and the openings average from about 100 to about 1000 μ

m in diameter.

30. The apparatus of claim 26 wherein the remote plasma generator comprises a microwave applicator.

31. The apparatus of claim 26 wherein the plasma processing apparatus is comprised by a deposition system.

32. The apparatus of claim 26 wherein the plasma processing apparatus is comprised by an etch system.

33-87. -87. (canceled)