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Vertical nitride based semiconductor light emitting device having improved light extraction efficiency

  • US 20060261323A1
  • Filed: 05/10/2006
  • Published: 11/23/2006
  • Est. Priority Date: 05/19/2005
  • Status: Active Grant
First Claim
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1. A vertical nitride semiconductor light emitting device comprising:

  • a conductive substrate having light transmissibility;

    a first conductivity-type nitride semiconductor layer formed on the conductive substrate;

    an active layer formed on the first conductivity-type nitride semiconductor layer; and

    a second conductivity-type nitride semiconductor layer formed on the active layer, a conductive light scattering layer formed on an underside of the conductive substrate, the conductive light scattering layer made of a conductive material having a light transmissibility of 70% or more and having a rough pattern formed on an outer surface to scatter light.

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