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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20060261336A1
  • Filed: 05/16/2006
  • Published: 11/23/2006
  • Est. Priority Date: 05/20/2005
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor layer having a source region, a drain region, a first channel forming region and a second channel forming region between the source region and the drain region, and an intermediate impurity region between the first channel forming region and the second channel forming region;

    a gate insulating layer above the semiconductor layer; and

    a gate electrode comprising a first conductive layer, a second conductive layer in contact with the first conductive layer and a third conductive layer in contact with the first conductive layer on the gate insulating layer, wherein the first conductive layer is overlapped with at least the first channel forming region, the intermediate impurity region, and the second channel forming region, wherein the second conductive layer is overlapping the first channel forming region, and wherein the third conductive layer is located apart from the second conductive layer, and is overlapping the second channel forming region.

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