Semiconductor device and manufacturing method of the same

• US 20060261341A1
• Filed: 07/26/2006
• Published: 11/23/2006
• Est. Priority Date: 08/02/2002
• Status: Abandoned Application

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamaguchi, Tetsuji, Takayama, Toru, Yamazaki, Shunpei, Akimoto, Kengo
• Application Number:
  US11/492,996
• Publication Number:
  US 20060261341A1
• Time in Patent Office: Days
• US Class Current: 257/66
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02266 deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: H01L 21/3185 of siliconnitrides
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/67248 Temperature monitoring
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate

Abstract

It is an object of the present invention is to provide a technique for forming a dense insulating film of good quality that is applicable to a transistor made on a substrate weak against heat such as a glass and a semiconductor device that can realize high performance and high reliability using the technique. In the present invention a silicon oxide film is formed on a crystalline semiconductor film, which is formed on an insulating surface, by the sputtering method using silicon as a target by applying high-frequency power in an atmosphere containing oxygen or oxygen and a rare gas, a silicon nitride film is formed thereon by applying high-frequency power in an atmosphere containing nitrogen or nitrogen and a rare gas, and then, heat treatment of a stacked body of the crystalline semiconductor film, the silicon oxide film, and the silicon nitride film at a temperature higher than a temperature for forming the films is performed.

Claims

1. A semiconductor device comprising:

a crystalline semiconductor film over a substrate;

a gate electrode adjacent to the crystalline semiconductor film; and

an insulating stacked body between the crystalline semiconductor film and the gate electrode, the insulating stacked body comprising a silicon oxide film and a silicon nitride film,

wherein the insulating stacked body has a fluctuation value of a flat-band voltage of 0.5 V or less in a bias thermal stress test for applying an electric field intensity of 1.7 MV/cm for one hour at a heating temperature of 150°

C.

5. A semiconductor device according to claim 1,

wherein the substrate comprises the material selected from a group consisting of barium borosilicate glass, alumino borosilicate glass, alumino silicate glass.

9. A semiconductor device according to claim 1,

wherein the gate electrode is located over the crystalline semiconductor layer.

13. A device selected from the group consisting of a microcomputer, a media processor, graphics LSI, an encryption LSI, a memory, and an LSI for cellular phone comprising the semiconductor device according to claim 1.

2. A semiconductor device comprising:

a crystalline semiconductor film over a substrate;

a gate electrode adjacent to the crystalline semiconductor film; and

an insulating stacked body between the crystalline semiconductor film and a gate electrode, the insulating stacked body comprising of a silicon oxide film and a silicon nitride film,

wherein the insulating stacked body has a fluctuation value of a flat-band voltage of 0.5 V or less in a bias thermal stress test for applying an electric field intensity of 1.7 MV/cm for one hour at a heating temperature of 150°

C.,

wherein the silicon oxide film is to be etched by a mixed water solution containing 7.13% of ammonium hydrogen fluoride and 15.4% of ammonium fluoride at 100 nm/min or less, and

wherein the silicon nitride film is to be etched by the mixed water solution at 10 nm/min or less.

6. A semiconductor device according to claim 2,

wherein the substrate comprises the material selected from a group consisting of barium borosilicate glass, alumino borosilicate glass, alumino silicate glass.

10. A semiconductor device according to claim 2,

wherein the gate electrode is located over the crystalline semiconductor layer.

14. A device selected from the group consisting of a microcomputer, a media processor, graphics LSI, an encryption LSI, a memory, and an LSI for cellular phone comprising the semiconductor device according to claim 2.

3. A semiconductor device comprising:

a semiconductor film over a substrate;

a gate electrode adjacent to the crystalline semiconductor film; and

an insulating stacked body between the semiconductor film and a gate electrode, the insulating stacked body comprising a silicon oxide film and a silicon nitride film,

wherein the insulating stacked body has a fluctuation value of a flat-band voltage of 0.5 V or less in a bias thermal stress test for applying an electric field intensity of 1.7 MV/cm for one hour at a heating temperature of 150°

C.

7. A semiconductor device according to claim 3,

wherein the substrate comprises the material selected from a group consisting of barium borosilicate glass, alumino borosilicate glass, alumino silicate glass.

11. A semiconductor device according to claim 3,

wherein the gate electrode is located over the semiconductor layer.

15. A device selected from the group consisting of a microcomputer, a media processor, graphics LSI, an encryption LSI, a memory, and an LSI for cellular phone comprising the semiconductor device according to claim 3.

4. A semiconductor device comprising:

a semiconductor film over a substrate;

a gate electrode adjacent to the crystalline semiconductor film; and

an insulating stacked body between the crystalline semiconductor film and a gate electrode, the insulating stacked body comprising of a silicon oxide film and a silicon nitride film,

wherein the insulating stacked body has a fluctuation value of a flat-band voltage of 0.5 V or less in a bias thermal stress test for applying an electric field intensity of 1.7 MV/cm for one hour at a heating temperature of 150°

C.,

wherein the silicon oxide film is to be etched by a mixed water solution containing 7.13% of ammonium hydrogen fluoride and 15.4% of ammonium fluoride at 100 nm/min or less, and

wherein the silicon nitride film is to be etched by the mixed water solution at 10 nm/min or less.

8. A semiconductor device according to claim 4,

wherein the substrate comprises the material selected from a group consisting of barium borosilicate glass, alumino borosilicate glass, alumino silicate glass.

12. A semiconductor device according to claim 4,

wherein the gate electrode is located over the semiconductor layer.

16. A device selected from the group consisting of a microcomputer, a media processor, graphics LSI, an encryption LSI, a memory, and an LSI for cellular phone comprising the semiconductor device according to claim 4.