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Vertical integrated-gate CMOS device and its fabrication process

  • US 20060261406A1
  • Filed: 05/18/2005
  • Published: 11/23/2006
  • Est. Priority Date: 05/18/2005
  • Status: Abandoned Application
First Claim
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1. Yijian Chen claims that he invents the vertical integrated-gate CMOS device as shown in the FIG. 2 of the attached document, and he designs several examples of process sequence as shown in FIGS. 3, 4, 5 and 6 of the attached document to fabricate this device.

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