Semiconductor device and photoelectric conversion device and scanner using the same

• US 20060261413A1
• Filed: 05/11/2006
• Published: 11/23/2006
• Est. Priority Date: 05/13/2005
• Status: Abandoned Application

• Current Assignee: ROHM Co., Ltd.
• Original Assignee: ROHM Co., Ltd.
• Inventors: Yamada, Nobuyuki, Tamagawa, Toshimitsu
• Application Number:
  US11/433,704
• Publication Number:
  US 20060261413A1
• Time in Patent Office: Days
• US Class Current: 257/355
• CPC Class Codes: H01L 27/0255 using diodes as protective elements
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 31/02019 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H04N 25/00 Circuitry of solid-state image sensors [SSIS]; Control thereof
• CPC Class Codes: H04N 25/70 SSIS architectures; Circuits associated therewith

Abstract

A semiconductor device includes a photoelectric conversion element outputting an electric signal in accordance with an externally input optical signal, an internal circuit processing the electric signal, a signal terminal inputting or outputting a signal to the internal circuit, a first voltage terminal supplying a first voltage to the internal circuit, and a second voltage terminal supplying a second voltage lower than the first voltage to the internal circuit. The semiconductor device further includes a first protection element connected in an electrically reverse direction between the signal terminal and the first voltage and having at least one PN junction and a second protection element connected in an electrically reverse direction between the first voltage and the second voltage and having at least one PN junction, so that immunity to electrostatic noise can be improved and electrostatic breakdown and malfunction of the photoelectric conversion element can be suppressed.

Claims

1. A semiconductor device, comprising:

a photoelectric conversion element outputting an electric signal in accordance with an externally input optical signal;

an internal circuit receiving said electric signal;

a signal terminal inputting or outputting a signal to said internal circuit;

a first voltage terminal supplying a first voltage;

a second voltage terminal supplying a second voltage lower than the first voltage;

a first protection element connected in an electrically reverse direction between said signal terminal and said first voltage terminal and having at least one PN junction; and

a second protection element connected in an electrically reverse direction between said first voltage terminal and said second voltage terminal and having at least one PN junction.

2. The semiconductor device according to claim 1, wherein

said second protection element is arranged between said signal terminal and said first protection element on one semiconductor substrate.

3. The semiconductor device according to claim 1, wherein

said photoelectric conversion element and said internal circuit are arranged successively from one side of longitudinal sides of a semiconductor chip formed in a rectangular shape,

said signal terminal, said first protection element and said second protection element are provided in vicinity of another side of said longitudinal sides of the semiconductor chip, and

said second protection element is provided closer to said signal terminal than said first protection element.

4. The semiconductor device according to claim 1, further comprising a P-type semiconductor substrate;

wherein

said photoelectric conversion element is formed by a first high-concentration N-type semiconductor region connected to said internal circuit and a first high-concentration P-type semiconductor region connected to the second voltage terminal, that are formed in said P-type semiconductor substrate,

said first protection element is formed by a low-concentration N-type semiconductor region, a second high-concentration N-type semiconductor region connected to the first voltage terminal formed in said low-concentration N-type semiconductor region, and a second high-concentration P-type semiconductor region connected to said signal terminal, that are formed in said P-type semiconductor substrate,

said second protection element is formed by a third high-concentration N-type semiconductor region connected to the first voltage terminal and a third high-concentration P-type semiconductor region connected to the second voltage terminal, that are provided on said P-type substrate adjacent to said low-concentration N-type semiconductor region, and

said internal circuit receives the electric signal output from said photoelectric conversion element and an electric signal input from said signal terminal.

5. The semiconductor device according to claim 4, wherein

said third high-concentration N-type semiconductor region connected to the first voltage terminal is arranged in vicinity of said signal terminal.

6. The semiconductor device according to claim 5, wherein

a wiring resistance between said second high-concentration N-type semiconductor region and said third high-concentration N-type semiconductor region is set to a value from 0.1 m Ω

to 100 Ω

.

13. The semiconductor device according to claim 1, wherein

the signal applied to said signal terminal has a frequency set at least to 0.2 MHz.

15. The semiconductor device according to claim 1, wherein

in a semiconductor chip formed in a rectangular shape, M (M is an integer equal to or larger than 2) photoelectric conversion elements of said semiconductor device are arranged along a longitudinal direction of rectangle.

7. A semiconductor device, comprising:

a photoelectric conversion element outputting an electric signal in accordance with an externally input optical signal;

an internal circuit receiving said electric signal;

a signal terminal inputting or outputting a signal to said internal circuit;

a first voltage terminal supplying a first voltage;

a second voltage terminal supplying a second voltage lower than the first voltage;

a first protection element connected in an electrically reverse direction between said signal terminal and said second voltage terminal and having at least one PN junction; and

a second protection element connected in an electrically reverse direction between said first voltage terminal and said second voltage terminal and having at least one PN junction.

8. The semiconductor device according to claim 7, wherein

said second protection element is arranged between said signal terminal and said first protection element on one semiconductor substrate.

9. The semiconductor device according to claim 7, wherein

said photoelectric conversion element and said internal circuit are arranged successively from one side of longitudinal sides of a semiconductor chip formed in a rectangular shape,

said signal terminal, said first protection element and said second protection element are arranged in vicinity of another side of said longitudinal sides of the semiconductor chip, and

said second protection element is provided closer to said signal terminal than said first protection element.

10. The semiconductor device according to claim 7, further comprising an N-type semiconductor substrate;

wherein

said photoelectric conversion element is formed by a first high-concentration P-type semiconductor region connected to said internal circuit and a first high-concentration N-type semiconductor region connected to the first voltage terminal, that are formed in said N-type semiconductor substrate,

said first protection element is formed by a low-concentration P-type semiconductor region, a second high-concentration P-type semiconductor region connected to the second voltage terminal formed in said low-concentration P-type semiconductor region, and a second high-concentration N-type semiconductor region connected to said signal terminal, that are formed in said N-type semiconductor substrate,

said second protection element is formed by a third high-concentration N-type semiconductor region connected to the first voltage terminal and a third high-concentration P-type semiconductor region connected to the second voltage terminal, that are provided on said N-type substrate adjacent to said low-concentration P-type semiconductor region, and

said internal circuit receives the electric signal output from said photoelectric conversion element and an electric signal input from said signal terminal.

11. The semiconductor device according to claim 10, wherein

said third high-concentration P-type semiconductor region connected to a second voltage is arranged in vicinity of said signal terminal.

12. The semiconductor device according to claim 11, wherein

a wiring resistance between said second high-concentration P-type semiconductor region and said third high-concentration P-type semiconductor region is set to a value from 0.1 m Ω

to 100 Ω

.

14. The semiconductor device according to claim 7, wherein

the signal applied to said signal terminal has a frequency set at least to 0.2 MHz.

16. The semiconductor device according to claim 7, wherein

in a semiconductor chip formed in a rectangular shape, M (M is an integer equal to or larger than 2) photoelectric conversion elements of said semiconductor device are arranged along a longitudinal direction of rectangle.

17. A photoelectric conversion device formed in a rectangular shape comprising N (N is an integer equal to or larger than 2) semiconductor chips arranged along a longitudinal direction of rectangle;

wherein

each said semiconductor chip includes

a photoelectric conversion element outputting an electric signal in accordance with an externally input optical signal,

an internal circuit receiving said electric signal,

a signal terminal inputting or outputting a signal to said internal circuit,

a first voltage terminal supplying a first voltage,

a second voltage terminal supplying a second voltage lower than the first voltage,

a first protection element connected in an electrically reverse direction between said signal terminal and said first voltage terminal and having at least one PN junction, and

a second protection element connected in an electrically reverse direction between said first voltage terminal and said second voltage terminal and having at least one PN junction.

18. A photoelectric conversion device formed in a rectangular shape comprising N (N is an integer equal to or larger than 2) semiconductor chips arranged along a longitudinal direction of rectangle;

wherein

each said semiconductor chip includes

a photoelectric conversion element outputting an electric signal in accordance with an externally input optical signal,

an internal circuit receiving said electric signal,

a signal terminal inputting or outputting a signal to said internal circuit,

a first voltage terminal supplying a first voltage,

a second voltage terminal supplying a second voltage lower than the first voltage,

a first protection element connected in an electrically reverse direction between said signal terminal and said second voltage terminal and having at least one PN junction, and

a second protection element connected in an electrically reverse direction between said first voltage terminal and said second voltage terminal and having at least one PN junction.

19. A scanner comprising an image sensor portion;

wherein

said image sensor portion includes a photoelectric conversion device formed in a rectangular shape,

said photoelectric conversion device includes N (N is an integer equal to or larger than

     2) semiconductor chips arranged along a longitudinal direction of rectangle, and

each said semiconductor chip includes

a photoelectric conversion element outputting an electric signal in accordance with an externally input optical signal,

an internal circuit receiving said electric signal,

a signal terminal inputting or outputting a signal to said internal circuit,

a first voltage terminal supplying a first voltage,

a second voltage terminal supplying a second voltage lower than the first voltage,

a first protection element connected in an electrically reverse direction between said signal terminal and said first voltage terminal and having at least one PN junction, and

a second protection element connected in an electrically reverse direction between said first voltage terminal and said second voltage terminal and having at least one PN junction.

20. A scanner comprising an image sensor portion;

wherein

said image sensor portion includes a photoelectric conversion device formed in a rectangular shape,

said photoelectric conversion device includes N (N is an integer equal to or larger than

     2) semiconductor chips arranged along a longitudinal direction of rectangle, and

each said semiconductor chip includes

a photoelectric conversion element outputting an electric signal in accordance with an externally input optical signal,

an internal circuit receiving said electric signal,

a signal terminal inputting or outputting a signal to said internal circuit,

a first voltage terminal supplying a first voltage,

a second voltage terminal supplying a second voltage lower than the first voltage,

a first protection element connected in an electrically reverse direction between said signal terminal and said second voltage terminal and having at least one PN junction, and

a second protection element connected in an electrically reverse direction between said first voltage terminal and said second voltage terminal and having at least one PN junction.