Semiconductor device

• US 20060261460A1
• Filed: 07/31/2006
• Published: 11/23/2006
• Est. Priority Date: 04/11/2003
• Status: Abandoned Application

• Current Assignee: Kenji Koyama, Toshihiko Kyogoku, Toshihiro Miura, Yusuke Sato
• Original Assignee: Kenji Koyama, Toshihiko Kyogoku, Toshihiro Miura, Yusuke Sato
• Inventors: Sato, Yusuke, Koyama, Kenji, Miura, Toshihiro, Kyogoku, Toshihiko
• Application Number:
  US11/495,460
• Publication Number:
  US 20060261460A1
• Time in Patent Office: Days
• US Class Current: 257/685
• CPC Class Codes: H01L 2223/6655 Matching arrangements, e.g. arrangement of inductive and capacitive components
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48195 the item being a discrete passive component
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/16 the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 25/165 Containers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01037 : Rubidium [Rb]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/01061 : Promethium [Pm]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01088 : Radium [Ra]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/1517 : Multilayer substrate
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/19105 : in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/30111 : matching
• CPC Class Codes: H03F 1/0205 : in transistor amplifiers
• CPC Class Codes: H03F 1/0283 : Reducing the number of DC-current paths
• CPC Class Codes: H03F 2200/111 : the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
• CPC Class Codes: H03F 2200/18 : the bias of the gate of a FET being controlled by a control signal
• CPC Class Codes: H03F 2200/408 : the output amplifying stage of an amplifier comprising three power stages
• CPC Class Codes: H03F 2200/451 : the amplifier being a radio frequency amplifier
• CPC Class Codes: H03F 3/195 : in integrated circuits
• CPC Class Codes: H05K 1/0263 : High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board H05K1/0293 takes precedence
• CPC Class Codes: H05K 1/115 : Via connections; Lands around holes or via connections H05K1/112 takes precedence
• CPC Class Codes: H05K 2201/09627 : Special connections between adjacent vias, not for grounding vias
• CPC Class Codes: H05K 2201/0979 : Redundant conductors or connections, i.e. more than one current path between two points
• CPC Class Codes: H05K 2203/049 : Wire bonding

Abstract

An electrode on a main surface of a module board, to which an emitter electrode of a semiconductor chip formed with a switching element of a power supply control circuit that supplies a power supply voltage to amplifier circuit parts of a power module of a digital cellular phone is electrically connected to a wiring in an internal layer of the module board through a plurality of viaholes. Further, the wiring CL1 is electrically connected to an electrode for the supply of the power supply voltage, which is provided on a back surface of the module board. Accordingly, an output characteristic of the semiconductor device is improved.

Claims

1-11. -11. (canceled)

12. A semiconductor device, comprising:

a first semiconductor chip including a bipolar transistor of a power supply control circuit that converts a first voltage to a second voltage;

a second semiconductor chip including an amplifier circuit using the second voltage as a power supply; and

a wiring board equipped with the first and second semiconductor chips,

wherein the wiring board includes a first surface over which the first and second semiconductor chips are mounted, and a second surface provided at the side opposite to the first surface,

wherein a first electrode for an emitter electrode of the bipolar transistor and a second electrode for a collector electrode of the bipolar transistor are provided over the first surface,

wherein a third electrode for the first voltage, which is electrically connected to the first electrode through the wiring path of the wiring board, and a fourth electrode for the second voltage, which is electrically connected to the second electrode through the wiring path in the wiring board are provided over the second surface, and

wherein the third electrode and the fourth electrodes are disposed adjacent to each other.

13. A semiconductor device according to claim 12, wherein connecting portions extending in the direction intersecting the first and second surfaces of the wiring board are provided in a wiring path which electrically connects the first electrode of the first surface and the third electrode of the second surface to each other, and a plurality of the connecting portions are bonded to the first electrode and the third electrode.

14. A semiconductor device according to claim 12, wherein the emitter electrode provided in the first semiconductor chip and the first electrode of the wiring board are electrically connected to each other by bonding wires.

15. A semiconductor device according to claim 14, wherein connecting portions extending in the direction intersecting the first and second surfaces of the wiring board are provided in a wiring path which electrically connects the first electrode of the first surface and the third electrode of the second surface to each other, a plurality of the connecting portions are bonded to the first electrode and the third electrode, and each of the bonding wires is bonded to an area of the first electrode, to which the connecting portions are not bonded.

16. A semiconductor device according to claim 12, wherein connecting portions extending in the direction intersecting the first and second surfaces of the wiring board are provided in a wiring path which electrically connects the second electrode of the first surface and the fourth electrode of the second surface to each other, and a plurality of the connecting portions are bonded to the second electrode and the fourth electrode.

17. A semiconductor device according to claim 12, wherein the third electrode of the second surface of the wiring board is provided directly below the emitter electrode of the first semiconductor chip over the first surface.

18-20. -20. (canceled)