Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing

• US 20060263540A1
• Filed: 05/17/2005
• Published: 11/23/2006
• Est. Priority Date: 05/17/2005
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Ramaswamy, Kartik, Mayur, Abhilash J., Hanawa, Hiroji, Collins, Kenneth S., Nguyen, Andrew, Al-Bayati, Amir, Parihar, Vijay, Jennings, Dean, Gallo, Biagio, Ma, Kai
• Granted Patent: US 7,422,775 B2
• Time in Patent Office: Days
• US Class Current: 427/569
• CPC Class Codes: H05H 1/46 using applied electromagnetic fields, e.g. high frequency or microwave energy H05H1/26 takes precedence

Abstract

A method of processing a workpiece includes introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and exposing the workpiece to optical radiation that is at least partially absorbed in the optical absorber layer.

Claims

1. A method of processing a workpiece, comprising:

introducing an optical absorber material precursor gas into a chamber containing the workpiece;

generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying said workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on said workpiece;

exposing said workpiece to optical radiation that is at least partially absorbed in said optical absorber layer.

2. The method of claim 1 wherein said optical radiation comprises one of:

(a) a flash lamp;

(b) a rapid thermal anneal light source;

(c) a laser light source.

3. The method of claim 1 further comprising generating said optical radiation by focusing light from an array of lasers into a line beam on the top surface of said workpiece and scanning said line beam across said top surface in a direction transverse to said line beam.

4. The method of claim 3 wherein said line beam is transverse to a fast scan axis and wherein the step of focusing light from an array of lasers comprises:

collimating light along said fast axis in a set of cylindrical lenslets at the outputs of respective lasers of said array; and

homogenizing light intensity distribution of the light from said array of lasers along a slow axis transverse to said fast axis in a light pipe with multiple reflections along said slow axis and little or no reflections along said fast axis.

5. The method of claim 1 wherein the step of applying RF source power comprises coupling RF source power to an external portion of the reentrant path.

6. The method of claim 1 further comprising maintaining said workpiece at a temperature below 200 degrees C.

7. The method of claim 6 wherein said temperature of the workpiece is below 100 degrees C.

8. The method of claim 1 further comprising applying bias power or voltage to the workpiece.

9. The method of claim 8 wherein said optical absorber material comprises amorphous carbon and said precursor gas comprises a carbon-containing gas.

10. The method of claim 9 further comprising including an absorption-enhancing species in the optical absorbing layer.

11. The method of claim 10 wherein the step of including the absorption-enhancing species in the optical absorbing layer comprises adding an optical absorption enhancing species precursor gas to the optical absorber material precursor gas during deposition of the optical absorber material.

12. The method of claim 10 wherein the step of including the absorption-enhancing species in the optical absorbing layer comprises ion implanting the optical absorption-enhancing species into the optical absorption layer after the optical absorber layer has been deposited.

13. The method of claim 8 further comprising adjusting said bias power or voltage to realize a predetermined stress level in the optical absorption layer.

14. The method of claim 13 wherein said predetermined stress level corresponds to compressive stress.

15. The method of claim 1 further comprising adjusting the level of said RF source power to realize a desired degree of conformality in the optical absorption layer.

16. The method of claim 14 wherein the step of adjusting comprises setting said RF source power to a sufficiently high level to render the deposited layer conformal.

17. The method of claim 8 further comprising increasing said bias power or voltage level over time from a starting value to maximum value so as to grade the stress level in said optical absorber layer.

18. The method of claim 11 further comprising changing the proportion of the optical absorption-enhancing precursor gas in the chamber over time to vary the absorption characteristic over the depth of the optical absorber layer.

19. The method of claim 18 wherein the step of changing the proportion of the optical absorption-enhancing precursor gas over time comprises one of:

(a) ramping said proportion so as to grade the absorption characteristic over depth of the absorber layer;

(b) switching said proportion so as to form an antireflection coating in the absorber layer having sub-layers of alternately high and low opacities.

20. The method of claim 12 further comprising providing an ion implantation depth profile that varies over depth so as to vary opacity of the optical absorber layer over depth.