Infrared thermopile detector system for semiconductor process monitoring and control
First Claim
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1. A detector system for semiconductor process monitoring comprising:
- (a) a sampling region for a material;
(b) an infrared radiation source constructed and arranged to transmit infrared radiation through the sampling region; and
(c) a thermopile detector constructed and arranged to receive infrared radiation after the transmission thereof through the sampling region and to responsively generate an output signal correlative of material within said sampling region, wherein said detector system is adapted to receive said material into said sampling region from a semiconductor processing system to monitor and/or control said semiconductor process.
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Abstract
A thermopile-based detector for monitoring and/or controlling semiconductor processes, and a method of monitoring and/or controlling semiconductor processes using thermopile-based sensing of conditions in and/or affecting such processes.
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Citations
32 Claims
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1. A detector system for semiconductor process monitoring comprising:
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(a) a sampling region for a material;
(b) an infrared radiation source constructed and arranged to transmit infrared radiation through the sampling region; and
(c) a thermopile detector constructed and arranged to receive infrared radiation after the transmission thereof through the sampling region and to responsively generate an output signal correlative of material within said sampling region, wherein said detector system is adapted to receive said material into said sampling region from a semiconductor processing system to monitor and/or control said semiconductor process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 32)
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30. A semiconductor process system adapted for processing of or with a material therein, said system comprising:
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(a) a sampling region for the material;
(b) an infrared radiation source constructed and arranged to transmit an infrared radiation beam through the sampling region;
(c) a thermopile detector constructed and arranged to receive infrared radiation after the transmission of the infrared beam through the sampling region and to responsively generate an output signal correlative of a concentration of or sensing of said material; and
(d) a process controller arranged to receive the output of the thermopile detector and to responsively control one or more process conditions in and/or affecting the semiconductor process system. - View Dependent Claims (31)
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Specification