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Method for significant reduction of dislocations for a very high A1 composition A1GaN layer

  • US 20060264009A1
  • Filed: 04/25/2006
  • Published: 11/23/2006
  • Est. Priority Date: 04/25/2005
  • Status: Active Grant
First Claim
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1. A method for reduction of dislocation density in an AlGaN semiconductor comprising the steps of:

  • preparing a sapphire substrate for epitaxial layer growth, introducing a self-organized porous AlN layer on said subtrate, and growing an AlGaN layer on said AlN layer.

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