Electroless deposition process on a silicon contact
First Claim
1. A method for depositing a material on a substrate, comprising:
- positioning a substrate within a process chamber, wherein the substrate comprises an aperture containing an exposed silicon contact surface;
exposing the substrate to a preclean process to remove native oxides or contaminants from the exposed silicon contact surface; and
exposing the substrate to a first electroless deposition process to form a metal-containing layer on the exposed silicon contact surface.
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Accused Products
Abstract
Embodiments as described herein provide methods for depositing a material on a substrate during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate contains a contact aperture having an exposed silicon contact surface. In another embodiment, the substrate contains a contact aperture having an exposed silicide contact surface. The apertures are filled with a metal contact material by exposing the substrate to an electroless deposition process. The metal contact material may contain a cobalt material, a nickel material, or alloys thereof. Prior to filling the apertures, the substrate may be exposed to a variety of pretreatment processes, such as preclean processes and activations processes. A preclean process may remove organic residues, native oxides, and other contaminants during a wet clean process or a plasma etch process. Embodiments of the process also provide the deposition of additional layers, such as a capping layer.
362 Citations
60 Claims
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1. A method for depositing a material on a substrate, comprising:
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positioning a substrate within a process chamber, wherein the substrate comprises an aperture containing an exposed silicon contact surface;
exposing the substrate to a preclean process to remove native oxides or contaminants from the exposed silicon contact surface; and
exposing the substrate to a first electroless deposition process to form a metal-containing layer on the exposed silicon contact surface. - View Dependent Claims (2, 3, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A method for depositing a material on a substrate, comprising:
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positioning a substrate within a process chamber, wherein the substrate comprises an aperture containing an exposed silicon contact surface;
exposing the substrate to a preclean process to remove native oxides or contaminants from the exposed silicon contact surface;
exposing the substrate to an activation solution to form a metal silicide layer on the exposed silicon contact surface; and
filling the aperture with a metal contact material during an electroless deposition process. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42)
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43. A composition of an activation solution, comprising:
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a cobalt source at a concentration within a range from about 1 mM to about 100 mM;
a fluoride source at a concentration within a range from about 10 mM to about 400 mM; and
a hypophosphite source at a concentration within a range from about 5 mM to about 150 mM. - View Dependent Claims (44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58)
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59. A method for depositing a material on a substrate, comprising:
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positioning a substrate within a process chamber, wherein the substrate comprises an aperture containing an exposed silicon contact surface;
exposing the substrate to a plasma to remove native oxides or contaminants from the exposed silicon contact surface during a preclean process, wherein the preclean process comprises forming a thin film on the substrate by the plasma and removing the thin film by a vacuum sublimation process; and
exposing the substrate to a first electroless deposition process to form a metal-containing layer on the exposed silicon contact surface. - View Dependent Claims (60)
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Specification