Cleaning method and solution for cleaning a wafer in a single wafer process

• US 20060264343A1
• Filed: 07/31/2006
• Published: 11/23/2006
• Est. Priority Date: 06/26/2000
• Status: Abandoned Application

• Current Assignee: Steven Verhaverbeke, Truman J. Kelly
• Original Assignee: Steven Verhaverbeke, Truman J. Kelly
• Inventors: Verhaverbeke, Steven, Truman, J. Kelly
• Application Number:
  US11/497,486
• Publication Number:
  US 20060264343A1
• Time in Patent Office: Days
• US Class Current: 510/119
• CPC Class Codes: B08B 3/08 the liquid having chemical or dissolving effect substances used, see the relevant classes
• CPC Class Codes: C11D 1/29 Sulfates of polyoxyalkylene ethers
• CPC Class Codes: C11D 1/72 Ethers of polyoxyalkylene glycols
• CPC Class Codes: C11D 2111/22 Electronic devices, e.g. PCBs or semiconductors
• CPC Class Codes: C11D 3/044 Hydroxides or bases
• CPC Class Codes: C11D 3/32 Amides; Substituted amides
• CPC Class Codes: C11D 3/33 Amino carboxylic acids
• CPC Class Codes: C11D 3/3947 Liquid compositions
• CPC Class Codes: C11D 7/06 Hydroxides
• CPC Class Codes: C11D 7/265 Carboxylic acids or salts thereof
• CPC Class Codes: C23G 5/00 Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
• CPC Class Codes: H01L 21/02052 Wet cleaning only H01L21/02085 takes precedence
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles
• CPC Class Codes: Y10S 261/07 Carbonators

Abstract

The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NH₄OH), hydrogen peroxide (H₂O₂), water (H₂O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. And still yet another embodiment of the present invention the cleaning solution also comprises a dissolved gas such as H₂. In a particular embodiment of the present invention, this solution is used by spraying or dispensing it on a spinning wafer.

Claims

1. A rinse comprising:

H₂₀;

CO₂; and

an oxidant.

2. The rinse of claim 113 wherein an said rinse has an amount of CO₂ sufficient to dissipate static electricity in said rinse.

3. The rinse of claim 113 wherein the oxidant is chosen from the group O₂, O₃, and H₂O₂.