Sequential pulse deposition
First Claim
Patent Images
1. A machine readable medium having instructions stored thereon, comprising:
- first instructions for causing a chemical vapor deposition reactor to initiate depositing a film on a substrate by injecting a pulse of precursor gas into a reaction chamber; and
second instructions for causing the reactor to inject a pulse of reactant gas into the reaction chamber after the pulse of precursor gas has been injected into the reaction chamber.
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Abstract
A method for growing films on substrates using sequentially pulsed precursors and reactants, system and devices for performing the method, semiconductor devices so produced, and machine readable media containing the method.
76 Citations
37 Claims
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1. A machine readable medium having instructions stored thereon, comprising:
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first instructions for causing a chemical vapor deposition reactor to initiate depositing a film on a substrate by injecting a pulse of precursor gas into a reaction chamber; and
second instructions for causing the reactor to inject a pulse of reactant gas into the reaction chamber after the pulse of precursor gas has been injected into the reaction chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A machine readable medium that provides instructions that are executable by a processor, comprising:
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first instructions for providing a precursor gas to a reaction chamber that contains a semiconductor substrate;
second instructions for providing a reactant gas to the reaction chamber, wherein the precursor gas and the reactant gas are sequentially provided to the reaction chamber until a predetermined thickness of a selected material is deposited on the semiconductor substrate. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A machine readable medium having stored thereon a program that is executable by a processor to control a material deposition onto a semiconductor substrate, comprising:
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a first program module including instructions to interruptably supply a precursor gas and a reactant gas to a reaction chamber that contains a semiconductor substrate; and
a second program module including instructions to control a processing condition within the reaction chamber while the material deposition is occurring. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37)
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Specification