High plasma utilization for remote plasma clean

• US 20060266288A1
• Filed: 05/27/2005
• Published: 11/30/2006
• Est. Priority Date: 05/27/2005
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Choi, Soo Young
• Application Number:
  US11/139,349
• Publication Number:
  US 20060266288A1
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 9/20 Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel

Abstract

A method and apparatus for cleaning a chemical vapor deposition chamber are provided. The chemical vapor deposition chamber includes an inlet that introduces reactive species into the chamber from a remote plasma source while bypassing a gas distribution assembly of the chamber and an inlet that introduces reactive species from a remote plasma source into the chamber via the gas distribution assembly.

Claims

1. A chemical vapor deposition system for processing flat panel display substrates, comprising:

a chemical vapor deposition chamber comprising;

a chamber body;

a substrate support; and

a gas distribution assembly;

wherein the chamber body defines a first inlet configured to provide reactive species from a remote plasma source into a processing region of the chemical vapor deposition chamber via the gas distribution assembly, and the chamber body defines one or more inlets configured to provide reactive species from the same or a different remote plasma source into the processing region of the chemical vapor deposition chamber while bypassing the gas distribution assembly.

2. The chemical vapor deposition system of claim 1, wherein the second inlet is in a sidewall of the chamber body between the gas distribution assembly and the substrate support.

3. The chemical vapor deposition system of claim 1, wherein the first inlet is in a lid region of the chamber body.

4. The chemical vapor deposition system of claim 3, wherein the second inlet is in a sidewall of the chamber body below the gas distribution assembly.

5. The chemical vapor deposition system of claim 1, wherein the chamber body defines more than one inlet configured to provide reactive species from the same or a different remote plasma source into the processing region of the chemical vapor deposition chamber while bypassing the gas distribution assembly.

6. The chemical vapor deposition system of claim 1, wherein the chamber body defines two inlets configured to provide reactive species from the same or a different remote plasma source into the processing region of the chemical vapor deposition chamber while bypassing the gas distribution assembly, and the two inlets are located on opposite sides of the chemical vapor deposition chamber.

7. A chemical vapor deposition system for processing flat panel display substrates, comprising:

a first remote plasma source; and

a chemical vapor deposition chamber connected to the remote plasma source, the chemical vapor deposition chamber comprising;

a chamber body;

a substrate support; and

a gas distribution assembly;

wherein the chamber body defines a first inlet configured to provide reactive species from the first remote plasma source into a processing region of the chemical vapor deposition chamber via the gas distribution assembly, and the chamber body defines a second inlet configured to provide reactive species from the same or a different remote plasma source into the processing region of the chemical vapor deposition chamber while bypassing the gas distribution assembly.

8. The chemical vapor deposition system of claim 7, further comprising a flow restrictor adapted to provide a pressure differential between the first remote plasma source and the chemical vapor deposition chamber.

9. The chemical vapor deposition system of claim 7, further comprising a second remote plasma source connected to the chemical vapor deposition chamber, and wherein the second inlet is configured to provide reactive species from the second remote plasma source into the processing region of the chemical vapor deposition chamber while bypassing the gas distribution assembly.

10. The chemical vapor deposition system of claim 7, wherein the second inlet is configured to provide reactive species from the first remote plasma source into the processing region of the chemical vapor deposition chamber while bypassing the gas distribution assembly.

11. The chemical vapor deposition system of claim 7, further comprising a diverter in a gas line from the first remote plasma source to the chamber body, wherein the diverter is configured to provide a portion of the reactive species generated by the first remote plasma source to the first inlet and to provide a portion of the reactive species generated by the first remote plasma source to the second inlet.

12. The chemical vapor deposition system of claim 7, wherein the chamber body further defines a third inlet configured to provide reactive species from the same or a different remote plasma source into the processing region of the chemical vapor deposition chamber while bypassing the gas distribution assembly, wherein the second and third inlets are located on opposite sides of the chemical vapor deposition chamber.

13. A chemical vapor deposition system for processing flat panel display substrates, comprising:

a first remote plasma source;

a second remote plasma source;

a first chemical vapor deposition chamber connected to the first remote plasma source and the second remote plasma source, the first chemical vapor deposition chamber comprising;

a first chamber body;

a first substrate support; and

a first gas distribution assembly;

wherein the first chamber body defines a first inlet configured to provide reactive species from the first remote plasma source into a processing region of the first chemical vapor deposition chamber via the first gas distribution assembly, and the first chamber body defines a second inlet configured to provide reactive species from the second remote plasma source into the processing region of the first chemical vapor deposition chamber while bypassing the first gas distribution assembly; and

a second chemical vapor deposition chamber connected to the first remote plasma source and the second remote plasma source, the second chemical vapor deposition chamber comprising;

a second chamber body;

a second substrate support; and

a second gas distribution assembly;

wherein the second chamber body defines a first inlet configured to provide reactive species from the first remote plasma source into a processing region of the second chemical vapor deposition chamber via the second gas distribution assembly; and

the second chamber body defines a second inlet configured to provide reactive species from the second remote plasma source into the processing region of the second chemical vapor deposition chamber while bypassing the second gas distribution assembly.

14. The chemical vapor deposition system of claim 13, wherein the second inlet in the first chamber body is in a sidewall of the first chamber body between the first gas distribution assembly and the first substrate support, and the second inlet in the second chamber body is in a sidewall of the second chamber body between the second gas distribution assembly and the second substrate support.

15. The chemical vapor deposition system of claim 13, further comprising a flow controller between each of the remote plasma sources and each of the chamber bodies.

16. A method of cleaning a chemical vapor deposition chamber, comprising:

introducing reactive species from a remote plasma source into the chemical vapor deposition chamber through a first inlet configured to provide reactive species from the remote plasma source into a processing region of the chemical vapor deposition chamber via a gas distribution assembly of the chemical vapor deposition chamber; and

introducing reactive species from the same or a different remote plasma source into the processing region of the chemical vapor deposition chamber through a second inlet configured to provide reactive species from the same or a different remote plasma source into the processing region of the chemical vapor deposition chamber while bypassing the gas distribution assembly.

17. The method of claim 16, wherein the reactive species are introduced into the chemical vapor deposition chamber through the first inlet at a first flow rate, the reactive species are introduced into the chemical vapor deposition chamber through the second inlet at a second flow rate, and the second flow rate is between about 1 and about 10 times greater than the first flow rate.

18. The method of claim 16, wherein the reactive species are introduced through the first inlet for a first period of time and the reactive species are introduced through the second inlet for a second period of time.

19. The method of claim 16, wherein the reactive species introduced through the second inlet are provided by the same remote plasma source that provides the reactive species to the first inlet.

20. The method of claim 16, wherein the reactive species introduced through the second inlet are provided by a different remote plasma source than the remote plasma source that provides the reactive species to the first inlet.