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Reaction system for growing a thin film

  • US 20060266289A1
  • Filed: 01/17/2006
  • Published: 11/30/2006
  • Est. Priority Date: 01/18/2005
  • Status: Active Grant
First Claim
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1. An atomic layer deposition (ALD) thin film deposition apparatus, comprising:

  • a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein, the deposition chamber comprising a gas inlet that is in communication with the space;

    a gas system configured to deliver gas to the gas inlet of the deposition chamber, at least a portion of the gas system being positioned above the deposition chamber, the gas system comprising;

    a mixer configured to mix a plurality of gas streams; and

    a transfer member in fluid communication with the mixer and the gas inlet, the transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

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