Semiconductor storage device and manufacturing method thereof
First Claim
1. A semiconductor storage device including:
- a semiconductor substrate;
a selection transistor formed on a main surface of the semiconductor substrate;
an inter-layer insulative film disposed over the selection transistor;
a plug selectively disposed to pass through the inter-layer insulative film and connected electrically to the selection transistor;
a chalcogenide material layer connected to one end of the plug and disposed so as to extend over the inter-layer insulative film;
an upper electrode disposed over the chalcogenide material layer; and
an interfacial layer formed between the chalcogenide material layer and the inter-layer insulative film so as to cover at least one end of the plug and comprising a continuous insulator not having a region where the chalcogenide material layer and the inter-layer insulative film are not in direct contact with each other
2 Assignments
0 Petitions
Accused Products
Abstract
Since a chalcogenide material has low adhesion to a silicon oxide film, there is a problem in that it tends to separate from the film during the manufacturing step of a phase change memory. In addition, since the chalcogenide material has to be heated to its melting point or higher during resetting (amorphization) of the phase change memory, there is a problem of requiring extremely large rewriting current. An interfacial layer comprising an extremely thin insulator or semiconductor having the function as both an adhesive layer and a high resistance layer (thermal resistance layer) is inserted between chalcogenide material layer/interlayer insulative film and between chalcogenide material layer/plug.
39 Citations
18 Claims
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1. A semiconductor storage device including:
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a semiconductor substrate;
a selection transistor formed on a main surface of the semiconductor substrate;
an inter-layer insulative film disposed over the selection transistor;
a plug selectively disposed to pass through the inter-layer insulative film and connected electrically to the selection transistor;
a chalcogenide material layer connected to one end of the plug and disposed so as to extend over the inter-layer insulative film;
an upper electrode disposed over the chalcogenide material layer; and
an interfacial layer formed between the chalcogenide material layer and the inter-layer insulative film so as to cover at least one end of the plug and comprising a continuous insulator not having a region where the chalcogenide material layer and the inter-layer insulative film are not in direct contact with each other - View Dependent Claims (2, 3, 4, 5, 11)
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6. A semiconductor storage device including;
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a semiconductor substrate;
a selection transistor formed on a main surface of the semiconductor substrate;
an inter-layer insulative film disposed over the selection transistor;
a plug selectively disposed to pass through the inter-layer insulative film and connected electrically with the selection transistor;
a chalcogenide material layer connected to one end of the plug and disposed so as to extend over the inter-layer insulative film;
an upper electrode disposed over the chalcogenide material layer; and
an interfacial layer formed between the chalcogenide material layer and the inter-layer insulative film so as to cover at least one end of the plug and comprising a continuous semiconductor not having a region where the chalcogenide material layer and the inter-layer insulative film are not in direct contact with each other - View Dependent Claims (7, 8, 9, 10)
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12. A semiconductor storage device comprising;
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a semiconductor substrate;
a selection transistor formed on a main surface of the semiconductor substrate;
an inter-layer insulative film disposed over the selection transistor;
a plug selectively disposed to pass through the inter-layer insulative film and connected electrically with the selection transistor;
a chalcogenide material layer connected to one end of the plug and disposed so as to extend over the inter-layer insulative film;
an upper electrode disposed over the chalcogenide material layer;
an adhesion layer comprising a semiconductor formed between the chalcogenide material layer and the inter-layer insulative film; and
an interfacial layer formed between the chalcogenide material layer and the plug and comprising an alloy of a material of the adhesion layer and a material of the plug. - View Dependent Claims (13, 14, 15, 16, 17)
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18-31. -31. (canceled)
Specification