Devices incorporating heavily defected semiconductor layers
First Claim
1. A heterojunction diode including a first side and a second side, wherein said first side contains at least 107 dislocations and/or grain boundaries per cm2.
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Abstract
The structure and growth method are disclosed for a novel heterojunction diode structure. The invention exploits the Fermi level pinning properties of dislocations and defects in compound semiconductors to achieve heterojunctions with nonlinear current-voltage characteristics despite highly defected, polycrystalline, or amorphous semiconductors. The invention enable new diode, photodetector, and transistor devices to be implemented using highly lattice-mismatched semiconductors. The invention additionally enables thin film diodes, photodetectors, and transistors to be realized.
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Citations
20 Claims
- 1. A heterojunction diode including a first side and a second side, wherein said first side contains at least 107 dislocations and/or grain boundaries per cm2.
- 9. A metal-semiconductor-metal junction wherein said semiconductor exhibits at least 107 dislocations or grain boundaries per cm2.
- 12. A diode junction including at least 107 dislocations or grain boundaries per cm2, said diode junction acting as a Schottky, a PN, an nN isotype heterojunction, an MIM, an NIN, a PIP, a PIN, or a metal-semiconductor contact.
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15. A diode junction in accordance with claim 15 wherein said first side includes at least 25 % In atoms.
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