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Devices incorporating heavily defected semiconductor layers

  • US 20060267007A1
  • Filed: 12/28/2005
  • Published: 11/30/2006
  • Est. Priority Date: 12/31/2004
  • Status: Abandoned Application
First Claim
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1. A heterojunction diode including a first side and a second side, wherein said first side contains at least 107 dislocations and/or grain boundaries per cm2.

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