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Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

  • US 20060267029A1
  • Filed: 08/02/2006
  • Published: 11/30/2006
  • Est. Priority Date: 07/02/2004
  • Status: Active Grant
First Claim
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1. A method of fabricating a light emitting diode having a modified light emitting surface, the method comprising:

  • transferring a metal hard-mask having submicron patterns to the light emitting surface, wherein the mask is attached to a nano-patterned template and the submicron patterns were formed using the template;

    removing the template from the mask; and

    applying an etch process to at least one portion of the light emitting surface comprising the mask, wherein the process is applied for a time duration sufficient to change the morphology of the surface in the at least one portion of the surface covered by the mask.

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