Light emitting apparatus and method of manufacturing the same

• US 20060267042A1
• Filed: 07/27/2006
• Published: 11/30/2006
• Est. Priority Date: 10/12/2001
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Izuno, Kunihiro, Matsumoto, Kouki, Sakamoto, Keiji, Sano, Masahiko, Nagahama, Shinichi, Yanamoto, Tomoya
• Granted Patent: US 7,390,684 B2
• Time in Patent Office: Days
• US Class Current: 257/100
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/29111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32257 the layer connector connecting to a bonding area disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01012 Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01021 : Scandium [Sc]
• CPC Class Codes: H01L 2924/01025 : Manganese [Mn]
• CPC Class Codes: H01L 2924/01026 : Iron [Fe]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01037 : Rubidium [Rb]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01063 : Europium [Eu]
• CPC Class Codes: H01L 2924/01066 : Dysprosium [Dy]
• CPC Class Codes: H01L 2924/01067 : Holmium [Ho]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/0133 : Ternary Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/157 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01L 33/44 : characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/483 : Containers
• CPC Class Codes: H01L 33/501 : characterised by the materials, e.g. binder
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting apparatus comprising a light emitting device (101) disposed on a supporting body (105), and coating layers ((108, 109) that bind a fluorescent substance that absorbs light emitted by the light emitting device (101) and emits light of a different wavelength and secures the fluorescent substance onto the surface of the light emitting device (101). The coating layers (108, 109) are made of an inorganic material including an oxide and a hydroxide, each containing at least one element selected from the group consisting of Si, Al, Ga, Ti, Ge, P, B, Zr, Y, Sn, Pb and alkali earth metals. Also an adhesive layer (110) is made of the same inorganic material as that of the coating layers (108, 109).

Claims

1-22. -22. (canceled)

23. A method of manufacturing a light emitting apparatus comprising a light emitting device disposed on a supporting body;

a fluorescent substance that absorbs at least a portion of light emitted from said light emitting device and emits light of a different wavelength; and

a coating layer that includes said fluorescent substance and covers at least the surface of said light emitting device, the method comprising;

a first step of preparing a coating solution that contains an organometallic compound including at least one element selected from the group consisting of Si, Al, Ga, Ti, Ge, P, B, Zr, Y, Sn, Pb and alkali earth metals;

an organic solvent; and

a fluorescent substance;

a second step of applying said coating solution to said light emitting device; and

a third step of drying said coating solution so as to fix said fluorescent substance.

24. The method of manufacturing a light emitting apparatus according to claim 23,

wherein boiling point of said organic solvent used in said first step is in a range from 100°

C. to 200°

C.

25. The method of manufacturing a light emitting apparatus according to claim 23,

wherein said coating solution used in said first step is a hydrolyzed solution having viscosity in a range from 2.5 to 500 cps at 25°

C.

26. The method of manufacturing a light emitting apparatus according to claim 23,

wherein said coating solution used in said first step has acid concentration in a range from 20 to 500 ppm.

27. The method of manufacturing a light emitting apparatus according to claim 23,

wherein said coating solution including said fluorescent substance is sprayed in the form of mist of rotating spiral stream onto said light emitting device from above in said second step.

28. The method of manufacturing a light emitting apparatus according to claim 23,

wherein said light emitting device is heated to a temperature in a range from 50°

C. to 300°

C. in said second step.

29. The method of manufacturing a light emitting apparatus according to claim 23,

wherein the organometallic compound used in said first step is at least one selected from the group consisting of methyl silicate, ethyl silicate, N-propyl silicate, N-butyl silicate, aluminum isopropoxide, aluminum ethoxide and aluminum butoxide.

37. The method of manufacturing the light emitting apparatus according to claim 23, 30 or 34,

wherein said light emitting device comprises

a support substrate,

a junction layer that is formed on one principal surface of said support substrate, said junction layer having a eutectic layer;

and

stacked layers including a p-type nitride semiconductor layer of single-layer or multi-layer structure formed on the junction layer, an active layer formed on the p-type nitride semiconductor layer; and

an n-type nitride semiconductor layer of single-layer or multi-layer structure formed on the active layer.

38. The method of manufacturing a light emitting apparatus according to claim 37,

wherein at least a portion of the surface of said stacked layers has a concave-convex shape.

30. A method of manufacturing a light emitting apparatus having a supporting substrate;

a light emitting device consisting of gallium nitride-based compound semiconductor layers formed on a substrate, said light emitting device being disposed so that the substrate-side surface of said light emitting device opposes the top surface of said supporting body via an adhesive layer, the method comprising;

a first step of preparing an adhesive solution that contains an organometallic compound containing at least one element selected from the group consisting of Si, Al, Ga, Ti, Ge, P, B, Zr, Y, Sn, Pb and alkali earth metals, and an organic solvent, so as to obtain a hydrolyzed solution having viscosity in a range from 2.5 to 500 cps at 25°

C. and acid concentration in a range from 20 to 500 ppm;

a second step of applying the adhesive solution to the top surface of said supporting body and placing said light emitting device on the adhesive solution; and

a third step of drying the adhesive solution at a temperature in a range from 50°

C. to 300°

C. so as to bond the top surface of said supporting body and the substrate-side surface of said light emitting device.

31. The method of manufacturing a light emitting apparatus according to claim 30,

wherein boiling point of said organic solvent used in said first step is in a range from 100°

C. to 200°

C.

32. The method of manufacturing a light emitting apparatus according to claim 30,

wherein said organometallic compound used in said first step is at least one selected from the group consisting of metal alkoxide, metal diketonate and metal carbonate.

33. The method of manufacturing a light emitting apparatus according to claim 30,

wherein said adhesive layer contains a filler having heat conductivity higher than that of the oxide generated from said organometallic compound.

34. A method of manufacturing a light emitting apparatus having a light emitting device disposed on a supporting body;

a fluorescent substance that absorbs at least a portion of light emitted by said light emitting device and emits light of a different wavelength; and

a coating layer that includes the fluorescent substance and covers from the surface of said supporting body to the entire surface of said light emitting device,

wherein a coating solution containing said fluorescent substance is sprayed in the form of mist of rotating spiral stream onto said light emitting device from above.

35. The method of manufacturing a light emitting apparatus according to claim 34,

wherein the diameter of the spiral stream increases from the start point of the spray located above said light emitting device toward the surface of said light emitting device.

36. The method of manufacturing a light emitting apparatus according to claim 34 or 35,

wherein rotating speed of said coating solution decreases from the start point of the spray located above said light emitting device toward the surface of said light emitting device.