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Semiconductor Device Including Shallow Trench Isolation (STI) Regions with a Superlattice Therebetween

  • US 20060267130A1
  • Filed: 06/20/2006
  • Published: 11/30/2006
  • Est. Priority Date: 06/26/2003
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate;

    a plurality of shallow trench isolation (STI) regions in said substrate, at least some of said STI regions including divots therein;

    a respective superlattice between adjacent STI regions; and

    respective non-monocrystalline stringers in the divots.

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